Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions

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	Thin films of Titanium Nitride (TiN) can be deposited by either [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD]] or [[Specific Process Knowledge/Thin film deposition/Lesker\|reactive sputtering]] methods. If sputtering method is used the target is Ti and nitrogen (N<sub>2</sub>) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample. The process information is available below:		Thin films of Titanium Nitride (TiN) can be deposited by either [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)\|ALD]] or [[Specific Process Knowledge/Thin film deposition/Lesker\|reactive sputtering]] methods. If sputtering method is used the target is Ti and nitrogen (N<sub>2</sub>) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample. The process information is available below:


	*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2\|TiN deposition using ALD]].		*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2\|TiN deposition using ALD]].