Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions
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'''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the | '''*''' ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [mailto:thinfilm@nanolab.dtu.dk Thin film group].'' | ||
Revision as of 11:27, 25 March 2020
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Tantalum deposition
Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Temescal) | Sputter (Lesker) | |
|---|---|---|
| General description | E-beam deposition of Ta
(line-of-sight deposition) |
Sputter deposition of Ta
(not line-of-sight) |
| Pre-clean | Ar ion source | RF Ar clean |
| Layer thickness | 10Å to 0.2 µm* | 10Å to ? |
| Deposition rate | 0.5Å/s to 10Å/s | ~0.3Å/s |
| Batch size |
|
|
| Allowed materials |
|
|
| Comment | Tantalum deposition heats the chamber* |
* The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the Thin film group.