Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions

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Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Temescal)	Sputter (Lesker)
General description	E-beam deposition of Ta (line-of-sight deposition)	Sputter deposition of Ta (not line-of-sight)
Pre-clean	Ar ion source	RF Ar clean
Layer thickness	10Å to 0.6 µm*	10Å to ?
Deposition rate	0.5Å/s to 10Å/s	~0.3Å/s
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) Many smaller pieces	Pieces or 1x4" wafer or 1x6" wafer
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8 Metals Carbon
Comment	As of August 2018, Ta has not yet been deposited in the Temescal. Please contact the Thin Film group to develop a process.

* If depositing more than 600 nm in total, write to metal@danchip.dtu.dk well in advance to ensure enough material is present.

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	== Tantalum deposition ==		== Tantalum deposition ==

	Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.		Tantalum can be deposited by e-beam evaporation and sputter deposition. In the chart below you can compare the different deposition equipment.