Template:SEM comparison table 314: Difference between revisions

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|style="background:Whitesmoke; color:black" rowspan="2" align="left" |'''Resolution'''
|style="background:Whitesmoke; color:black" rowspan="2" align="left" valign="top" |'''Resolution'''
|style="background:Whitesmoke; color:black" colspan="5" align="center"| The resolution of a SEM is strongly dependent on sample type and the operator. Resolution quoted is using sputtered gold on carbon
|style="background:Whitesmoke; color:black" colspan="5" align="center" valign="top"| The resolution of a SEM is strongly dependent on sample type and the operator. Resolution quoted is using sputtered gold on carbon
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* High-vacuum
* High-vacuum
•3.0nm at 30kV (SE)
**3.0nm at 30kV (SE)
•10nm at 3kV (SE)
**10nm at 3kV (SE)
•4.0nm at 30kV (BSE)
**4.0nm at 30kV (BSE)
* Low-vacuum
* Low-vacuum
•3.0nm at 30kV (SE)
**3.0nm at 30kV (SE)
4.0nm at 30kV (BSE)
** 4.0nm at 30kV (BSE)
> 12nm at 3kV (SE) -->
** > 12nm at 3kV (SE) -->
|B
|B
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* High vacuum  
* High vacuum  
0.8 nm at 30 kV (STEM)
**0.8 nm at 30 kV (STEM)
1.0 nm at 30 kV (SE)  
**1.0 nm at 30 kV (SE)  
2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE)  
**2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE)  
*High vacuum with beam deceleration option  
*High vacuum with beam deceleration option  
3.0 nm at 1 kV (BD mode + BSE)  
**3.0 nm at 1 kV (BD mode + BSE)  


* Low vacuum - 1.4 nm at 30 kV (SE)  
* Low vacuum - 1.4 nm at 30 kV (SE)  
•2.5 nm at 30 kV (BSE)  
**2.5 nm at 30 kV (BSE)  
•3.0 nm at 3 kV (SE)  
**3.0 nm at 3 kV (SE)  
* Extended vacuum mode (ESEM)  
* Extended vacuum mode (ESEM)  
•1.4 nm at 30 kV (SE)
**1.4 nm at 30 kV (SE)
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* High vacuum  
* High vacuum  
0.8 nm at 30 kV (STEM)
**0.8 nm at 30 kV (STEM)
1.0 nm at 30 kV (SE)  
**1.0 nm at 30 kV (SE)  
2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE)  
**2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE)  
*High vacuum with beam deceleration option  
*High vacuum with beam deceleration option  
3.0 nm at 1 kV (BD mode + BSE)  
**3.0 nm at 1 kV (BD mode + BSE)  


* Low vacuum - 1.4 nm at 30 kV (SE)  
* Low vacuum - 1.4 nm at 30 kV (SE)  
•2.5 nm at 30 kV (BSE)  
**2.5 nm at 30 kV (BSE)  
•3.0 nm at 3 kV (SE)  
**3.0 nm at 3 kV (SE)  
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* Electron Column
* Electron Column
•0.8nm @15kV
**0.8nm @15kV
•0.9nm @1kV
**0.9nm @1kV
* Ion Column
* Ion Column
•4.5nm @ 30kV
**4.5nm @ 30kV
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!Max sample size
!Max sample size
|style="background:Whitesmoke; color:black" colspan="5" align="center"| Consult with DTU Nanolab staff as weight, dimensions, pumping capacity and technique all play a roll in the sample size
|style="background:Whitesmoke; color:black" colspan="5" align="center"| Consult with DTU Nanolab staff as weight, dimensions, pumping capacity and technique all play a roll in the sample size

Revision as of 11:43, 24 March 2020

Equipment Nova QFEG AFEG Helios
Purpose
  • Conductive samples in High Vac
  • Charge reduction in Low Vac
  • X Ray Analysis with EDS
  • Crystallographic analysis using EBSD and both On and Off axis TKD
  • Conductive samples in High Vac
  • Charge reduction in Low Vac
  • Environmental control using Peltier stage
  • Cryogenic sample fixing/stabilization using cryo stage
  • X Ray Analysis with EDS
  • Conductive samples in High Vac
  • Charge reduction in Low Vac
  • Conductive samples in High Vac
  • Micro and Nano milling/fabrication using various gases and FIB
  • X Ray Analysis with EDS
  • Crystallographic analysis using EBSD and Off Axis TKD
Equipment position Building 314 Room 060 Building 314 Room 011 Building 314 Room 034 Building 314 Room 061
Resolution The resolution of a SEM is strongly dependent on sample type and the operator. Resolution quoted is using sputtered gold on carbon
B
  • High vacuum
    • 0.8 nm at 30 kV (STEM)
    • 1.0 nm at 30 kV (SE)
    • 2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE)
  • High vacuum with beam deceleration option
    • 3.0 nm at 1 kV (BD mode + BSE)
  • Low vacuum - 1.4 nm at 30 kV (SE)
    • 2.5 nm at 30 kV (BSE)
    • 3.0 nm at 3 kV (SE)
  • Extended vacuum mode (ESEM)
    • 1.4 nm at 30 kV (SE)
  • High vacuum
    • 0.8 nm at 30 kV (STEM)
    • 1.0 nm at 30 kV (SE)
    • 2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE)
  • High vacuum with beam deceleration option
    • 3.0 nm at 1 kV (BD mode + BSE)
  • Low vacuum - 1.4 nm at 30 kV (SE)
    • 2.5 nm at 30 kV (BSE)
    • 3.0 nm at 3 kV (SE)
  • Electron Column
    • 0.8nm @15kV
    • 0.9nm @1kV
  • Ion Column
    • 4.5nm @ 30kV
Detectors
  • ETD/TLD Secondary Electrons
  • BSED Back Scatter Electrons
  • LVD/LFD Low Vac SE
  • Helix Low Vac SE
  • EDS X Ray by energy
  • EBSD Electron Back Scatter Diffraction
  • TKD Transmission Kikuchi Diffraction
  • STEM Scanning Transmission Electron Microscopy
  • GAD Low Vac BSED
  • ETD Secondary Electrons
  • BSED Back Scatter Electrons
  • LVD/LFD Low Vac SE
  • GSED ESEM SE
  • EDS X Ray by energy
  • STEM Scanning Transmission Electron Microscopy
  • ETD Secondary Electrons
  • BSED Back Scatter Electrons
  • LVD/LFD Low Vac SE
  • GSED ESEM SE
  • EDS X Ray by energy
  • STEM Scanning Transmission Electron Microscopy
  • ETD/TLD Secondary Electrons
  • ABS Annular BSED
  • EDS X Ray by energy
  • EBSD Electron Back Scatter Diffraction
  • CDEM Continuos Dinode Electron Multiplier
Stage specifications
  • X 150mm Piezo
  • Y 150mm Piezo
  • Z 10mm
  • R 360⁰ Piezo
  • T 70⁰
  • X 50mm
  • Y 50mm
  • Z 50mm
  • R 360⁰
  • T 70⁰ Manual
  • X 50mm
  • Y 50mm
  • Z 50mm
  • R 360⁰
  • T 70⁰ Manua
  • X 150mm Piezo
  • Y 150mm Piezo
  • Z 10mm
  • R 360⁰ Piezo
  • T 70⁰
Options B C D E
Max sample size Consult with DTU Nanolab staff as weight, dimensions, pumping capacity and technique all play a roll in the sample size