Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions
New page: Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment. {| border="1" cellspacing="0" cellpadding="4" ! ! E-beam evapora... |
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! E-beam evaporation (Alcatel) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
! E-beam evaporation (Leybold) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Leybold|Leybold]]) | ||
! Sputter (Lesker) | ! Sputter (Lesker) | ||
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Revision as of 14:41, 5 February 2009
Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | E-beam evaporation (Leybold) | Sputter (Lesker) | |
|---|---|---|---|
| Batch size |
|
|
|
| Pre-clean | RF Ar clean | Ar ion bombartment | RF Ar clean |
| Layer thickness | 10Å to 1µm | 10Å to 1500 Å | 10Å to |
| Deposition rate | 2Å/s to 15Å/s | 1Å/s to 5Å/s | ~0.3Å/s |