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| | TiW alloy: 10%/90% by weight | | | TiW alloy: 10%/90% by weight |
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| ==Deposited film characteristics==
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| AFM pictures show how the surface roughness is dependent on the process parameters.
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| For the sputter process, the effect and argon pressure can be set to different values. Depending on the process parameters, the deposited layers will have different characteristics: the roughness, grain size and uniformity may be differnt.
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| '''Effect 150 W, pressure 1*10<sup>-3</sup> mbar'''
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| With use of the settings 150W and 1*10<sup>-3</sup> mbar, a surface with low roughness is deposited.
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| [[Image:Tiw 150W 0 001 nr2.jpg|480x480px|center|thumb|AFM picture of sputter deposited TiW. Used settings: 150W and 1*10<sup>-3</sup> mbar.]]
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| ''Measurement done September 2008, KNIL.''
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Revision as of 11:37, 19 March 2020
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Deposition of TiW alloy can be done in the Wordentec. If necessary, processes may also be developed for depositing TiW in the Lesker sputter setups (contact responsible staff for this).
Sputtering of TiW
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Sputter deposition (Wordentec)
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| General description
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Sputter deposition of TiW
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| Pre-clean
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RF Ar clean
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| Layer thickness
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| Deposition rate
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Depending on process parameters, see here.
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| Batch size
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- 24x2" wafers or
- 6x4" wafers or
- 6x6" wafers
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| Allowed substrates
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- Silicon wafers
- Quartz wafers
- Pyrex wafers
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| Allowed materials
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- Silicon oxide
- Silicon (oxy)nitride
- Photoresist
- PMMA
- Mylar
- SU-8
- Metals
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| Comments
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TiW alloy: 10%/90% by weight
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