Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 03 processing: Difference between revisions
| Line 35: | Line 35: | ||
Acceptance criteria on a 100 X 100 mm<sup>2</sup> area: Width of smallest resolved line 1000±100 nm (quality), alignment error 500 nm (quality), writing speed 1100 mm<sup>2</sup>/min (fast). | Acceptance criteria on a 100 X 100 mm<sup>2</sup> area: Width of smallest resolved line 1000±100 nm (quality), alignment error 500 nm (quality), writing speed 1100 mm<sup>2</sup>/min (fast). | ||
The acceptance test also included a verification of back side alignment (better than 1 µm), as well as | The acceptance test also included a verification of back side alignment (better than 1 µm), as well as a test of the conversion speed (less than 15 minutes for a dense design of circles). | ||
'''Exposed on mask blank, transferred via wet chrome etch, and measured at Heidelberg (FAT)''' | '''Exposed on mask blank, transferred via wet chrome etch, and measured at Heidelberg (FAT)''' | ||