Jump to content

Specific Process Knowledge/Lithography/Pretreatment: Difference between revisions

← Older editNewer edit →
VisualWikitext
Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,579 edits
Elkh (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
343 edits
Line 101: Line 101:


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific_Process_Knowledge/Lithography/Pretreatment#HMDS oven|HMDS oven]]</b>
 
|style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific_Process_Knowledge/Lithography/Pretreatment#Oven: HMDS 2|Oven: HMDS 2]]</b>
|style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific_Process_Knowledge/Lithography/Pretreatment#Oven: HMDS 2|Oven: HMDS 2]]</b>
|style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]</b>
|style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific_Process_Knowledge/Lithography/Coaters#Spin Track 1 + 2|Spin Track 1 + 2]]</b>
Line 112: Line 112:


|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* HMDS priming only
 
|
* HMDS priming only
* HMDS priming only
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Line 133: Line 132:
|style="background:LightGrey; color:black"|Contact angle
|style="background:LightGrey; color:black"|Contact angle
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* Si (native oxide): 86.7°
 
* SiO<sub>2</sub> (110 nm): 85.6°
 
* Boron Glass: 94.5°
|
* Si (native oxide): 77.8°
* Si (native oxide): 77.8°
* SiO<sub>2</sub> (110 nm): 81.7°
* SiO<sub>2</sub> (110 nm): 81.7°
Line 158: Line 155:
|style="background:LightGrey; color:black"|Process temperature
|style="background:LightGrey; color:black"|Process temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
150°C
 
|
150°C
150°C
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Line 171: Line 167:
|style="background:LightGrey; color:black"|Process time
|style="background:LightGrey; color:black"|Process time
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
32.5 minutes
 
|
25 minutes
25 minutes
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Line 185: Line 180:
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* 50 mm wafers
 
* 100 mm wafers
* 150 mm wafers
|
* 50 mm wafers
* 50 mm wafers
* 100 mm wafers
* 100 mm wafers
Line 204: Line 196:
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Silicon, glass, and polymer substrates
III-V materials on silicon carrier


Film or pattern of all but types, except type IV and resist/polymer
|
Silicon, glass, and polymer substrates
Silicon, glass, and polymer substrates


Line 230: Line 217:
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
1 - 25, multiple batches possible
 
|
1 - 25, multiple batches possible
1 - 25, multiple batches possible
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Pretreatment"