Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic: Difference between revisions
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| - <!--Process time (needed if ramping is enabled) --> | | - <!--Process time (needed if ramping is enabled) --> | ||
| | | 10 <!--Pressure --> | ||
| - <!--Process chamber setup --> | | - <!--Process chamber setup --> | ||
| 90 <!--SF6 flow --> | | 90 <!--SF6 flow --> | ||
Revision as of 12:48, 11 July 2019
Isotropic etching in silicon on the ICP Metal Etch
| Recipe | Step | Temp. | Time | Pres. | Hardware | Gasses | RF powers | Observations | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SF6 | O2 | C4F8 | Ar | CF4 | H2 | CH4 | BCl3 | Cl2 | HBr | Coil | Platen | SEM images of different runs | Keywords | ||||||
| isoslow1 | A | 20 | - | 10 | - | 90 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 400 | 3 | Click HERE! | NA |