Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions
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==Silicon nitride etch with the standard silicon oxide etch== | ==Silicon nitride etch with the standard silicon oxide etch== | ||
<gallery caption="Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on. Made by | <gallery caption="Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on. Made by bghe@nanolab February 2015 " widths="300px" heights="250px" perrow="3"> | ||
image:DUV_sin_01_2min17.jpg|Profile of lines with 1µm pitch | image:DUV_sin_01_2min17.jpg|Profile of lines with 1µm pitch | ||
image:DUV_sin_01_2min19.jpg|Profile of lines with 4µm pitch | image:DUV_sin_01_2min19.jpg|Profile of lines with 4µm pitch | ||
image:DUV_sin_01_2min20.jpg|Profile of 2µm line - zoom in on 4µm pitch | image:DUV_sin_01_2min20.jpg|Profile of 2µm line - zoom in on 4µm pitch | ||
</gallery> | </gallery> | ||
Revision as of 10:22, 28 January 2019
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Silicon nitride etch with STS recommended silicon nitride recipe
- Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon. The barc layer was etch in 1min15sek with the AOE barcetch recipe, done Marts 2016 by bghe@nanolab
2min etch: All resist is gone, only a little Si3N4 is left and etched down into the Si
30sec etch
30 sec etch - 1µm pitch
30 sec etch - 3µm pitch
30 sec etch - 3 µm pitch
Silicon nitride etch with the standard silicon oxide etch
- Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on. Made by bghe@nanolab February 2015
Profile of lines with 1µm pitch
Profile of lines with 4µm pitch
Profile of 2µm line - zoom in on 4µm pitch
