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Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions

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Alcatel replaced by Temescal
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!  
!  
   
   
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]])
! Sputter ([[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Lesker]])
|-
|-
|-style="background:WhiteSmoke; color:black"  
|-style="background:WhiteSmoke; color:black"  
! General description
! General description
| E-beam deposition of Ta
| E-beam deposition of Ta  
(line-of-sight deposition)
| Sputter deposition of Ta
| Sputter deposition of Ta
(not line-of-sight)
|-
|-
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Pre-clean
! Pre-clean
|RF Ar clean
|Ar ion source
|RF Ar clean
|RF Ar clean
|-
|-
|-style="background:WhiteSmoke; color:black"  
|-style="background:WhiteSmoke; color:black"  
! Layer thickness
! Layer thickness
|10Å to 1µm*
|10Å to 0.6 µm*
|10Å to
|10Å to ?
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|0.5Å/s to 10Å/s
|~0.3Å/s
|~0.3Å/s
|-
|-
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! Batch size
! Batch size
|
|
*Up to 1x4" wafers
*Up to 4x6" wafers
*smaller pieces
*Up to 3x8" wafers (ask for holder)
*Many smaller pieces
|
|
*Pieces or
*Pieces or
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|
|
* Silicon  
* Silicon
* Silicon oxide  
*Silicon oxide
* Silicon (oxy)nitride  
*Silicon (oxy)nitride
* Photoresist  
*Photoresist
* PMMA  
*PMMA
* Mylar  
*Mylar
* SU-8
*Metals
* Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
 
|
|
* Silicon
* Silicon
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|
|As of August 2018, Mo has not yet been deposited in the Temescal.
Please contact the Thin Film group to develop a process.
|
|
|}
|}
'''*''' ''For thicknesses above 200 nm permission is required.''
 
'''*''' ''If depositing more than 600 nm in total, write to metal@danchip.dtu.dk well in advance to ensure enough material is present.''

Revision as of 14:00, 29 August 2018

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Tantalum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.


E-beam evaporation (Temescal) Sputter (Lesker)
General description E-beam deposition of Ta

(line-of-sight deposition)

Sputter deposition of Ta

(not line-of-sight)

Pre-clean Ar ion source RF Ar clean
Layer thickness 10Å to 0.6 µm* 10Å to ?
Deposition rate 0.5Å/s to 10Å/s ~0.3Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • Many smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
Comment As of August 2018, Mo has not yet been deposited in the Temescal.

Please contact the Thin Film group to develop a process.

* If depositing more than 600 nm in total, write to metal@danchip.dtu.dk well in advance to ensure enough material is present.

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