Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum: Difference between revisions

Revision as of 12:40, 29 August 2018

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Molybdenum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Temescal)	Sputter deposition (Lesker)
General description	E-beam deposition of Mo	Sputter deposition of Mo
Pre-clean	Ar ion source	RF Ar clean
Layer thickness	10Å to 0.6 µm*	10Å to 500 Å
Deposition rate	1Å/s to 10Å/s	Depends on process parameters, roughly about 1 Å/s
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) Many smaller pieces	Pieces or 1x4" wafer or 1x6" wafer
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8
Comment	As of August 2018, Mo has not yet been deposited in the Temescal. Please contact the Thin Film group to develop a process.

* If depositing more than 600 nm in total, write to metal@danchip.dtu.dk well in advance to ensure enough material is present.

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-| As of August 2018, Mo has not yet been deposited in the Temescal. Contact the Thin Film group to develop a process.
+| As of August 2018, Mo has not yet been deposited in the Temescal.
+Please contact the Thin Film group to develop a process.
 |
 |-
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-'''*'''  ''For thicknesses above 600 nm permission from ThinFilm group (thinfilm@danchip.dtu.dk) is required to ensure enough material is present.''
+'''*'''  ''If depositing more than 600 nm in total, write to metal@danchip.dtu.dk well in advance to ensure enough material is present.''