Specific Process Knowledge/Thin film deposition/Deposition of Gold/Adhesion layers: Difference between revisions
| Line 27: | Line 27: | ||
image:Picture7.png|Fig. 4: TEM cross section images and 300x300 nm AFM images of the 2nm Cr/2nm Au sample (a-b) and of the 2nm Cr/20nm Au sample (c-d). </gallery> | image:Picture7.png|Fig. 4: TEM cross section images and 300x300 nm AFM images of the 2nm Cr/2nm Au sample (a-b) and of the 2nm Cr/20nm Au sample (c-d). </gallery> | ||
To investigate the crystal orientation of the metal thin-�lms, tramsimission Kikuchi diffraction was used (Fig. 5a). The nanostructure of the 20nm Au �lm has a bimodal grain | To investigate the crystal orientation of the metal thin-�lms, tramsimission Kikuchi diffraction was used (Fig. 5a) (see [[LabAdviser/CEN/Nova NanoSEM 600/Transmission Kikuchi diffraction|Transmission Kikuchi diffraction]] for more information). The nanostructure of the 20nm Au �lm has a bimodal grain | ||
size distribution (Fig. 5b). While the smaller grains have di�erent crystal orientations, the large grains (blue color) all have [111] orientation. Microstructural evolution and growth of metal thin-�lms deposited by physical vapor deposition on amorphous dielectric substrates follows island growth. The �rst thin-�lm growth step is the nucleation of small islands once the activation barrier and the critical nuclei size have been overcome. It is followed by a second step of island growth, during which the impinging atoms contribute to increase island size. The third step, usually happening simultaneously with step 2, is island coalescence, where a strong driving force is present for coarsening through surface atom di�usion and grain boundaries (GB) motion. During this process, the island growth is driven by the minimization of surface and interface energy. | size distribution (Fig. 5b). While the smaller grains have di�erent crystal orientations, the large grains (blue color) all have [111] orientation. Microstructural evolution and growth of metal thin-�lms deposited by physical vapor deposition on amorphous dielectric substrates follows island growth. The �rst thin-�lm growth step is the nucleation of small islands once the activation barrier and the critical nuclei size have been overcome. It is followed by a second step of island growth, during which the impinging atoms contribute to increase island size. The third step, usually happening simultaneously with step 2, is island coalescence, where a strong driving force is present for coarsening through surface atom di�usion and grain boundaries (GB) motion. During this process, the island growth is driven by the minimization of surface and interface energy. | ||
Fig. 5.4a represents two Au islands having di�erent crystal orientations. In | Fig. 5.4a represents two Au islands having di�erent crystal orientations. In | ||