Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions
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→Nickel deposition: removed Alcatel, added Temescal |
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|-style="background:silver; color:black" | |-style="background:silver; color:black" | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/ | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Pre-clean | ! Pre-clean | ||
| | |Ar ion bombardment | ||
|RF Ar clean | |RF Ar clean | ||
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! Layer thickness | ! Layer thickness | ||
|10Å to | |10Å to 1 µm* | ||
|10Å to 1 µm* | |10Å to 1 µm* | ||
|10Å to 2000 Å | |10Å to 2000 Å | ||
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! Deposition rate | ! Deposition rate | ||
|2Å/s to | |2Å/s to 10Å/s | ||
|10Å/s to 15Å/s | |10Å/s to 15Å/s | ||
|1 to 10Å/s | |1 to 10Å/s | ||
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! Batch size | ! Batch size | ||
| | | | ||
*Up to | *Up to 4x6" wafers | ||
*smaller pieces | *Up to 3x8" wafers (ask for holder) | ||
*Many smaller pieces | |||
| | | | ||
*24x2" wafers or | *24x2" wafers or | ||
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* Silicon | * Silicon | ||
* Silicon oxide | *Silicon oxide | ||
* Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
* Photoresist | *Photoresist | ||
* PMMA | *PMMA | ||
* Mylar | *Mylar | ||
* | *Metals | ||
* | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
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* Silicon | * Silicon | ||
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'''*''' ''To deposit layers thicker then | '''*''' ''To deposit layers thicker then 600 microns permission is required from metal@danchip.dtu.dk to ensure enough material is present in the machine'' | ||