Specific Process Knowledge/Etch/ICP Metal Etcher/Aluminium: Difference between revisions

From LabAdviser
Chasil (talk | contribs)
Jmli (talk | contribs)
No edit summary
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/Aluminium click here]'''  
 
<!--Checked for updates on 30/7-2018 - ok/jmli -->


=== Aluminium etch ===
=== Aluminium etch ===

Revision as of 12:56, 30 July 2018

Feedback to this page: click here

Aluminium etch

The aluminium etch has two steps:

Breakthrough
The breakthrough step is designed to break through the native aluminium oxide layer that is present on all aluminium surfaces. The duration of this step should remain fixed.
Main
The main step etches bulk aluminium.
Al etch
Parameter Process step
Breakthrough Main
Time (secs) 20 40 (variable)
HBr (sccm) - 15
Cl2 (sccm) 20 25
Pressure (mTorr) 2, Strike 3 sec@5 mTorr 1
Coil power (W) 600 500
Platen power (W) 125 100
Temperature (oC) 20 20
Spacers (mm) 30 30
Results
Etch rate ~350 nm/min (depending on features size and etch load)


Al etch made by Chantal Silvetre@danchip October 2014
Parameter Process step
Breakthrough Main
Time (secs) 20 40 (variable)
HBr (sccm) - 15
Cl2 (sccm) 20 25
Pressure (mTorr) 2, Strike 3 secs @ 6 mTorr 1
Coil power (W) 600 500
Platen power (W) 125 100
Temperature (oC) 20 20
Spacers (mm) 100 100
Results
Etch rate ~282 nm/min (depending on features size and etch load)

Al etch information supplied from STS

Al Etch Information (supplied from STS).