Specific Process Knowledge/Thin film deposition/Deposition of Gold/Adhesion layers: Difference between revisions
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allic bond with gold. 5 nm to 10 nm thick of Cr or Ti is commonly used and it is important to deposit Cr or Ti and then immediately Au. If the vacuum chamber is opened in between, the surface of Cr or Ti will get oxidized and that will give a poor adhesion. If a gold layer needs to be deposited directly on Silicon, then native oxide has to be removed by deep in diluted HF and immediately load the evaporation chamber. And after the deposition, the wafer has to be heated op to get some Au-Si diffusion which improves the adhesion. | allic bond with gold. 5 nm to 10 nm thick of Cr or Ti is commonly used and it is important to deposit Cr or Ti and then immediately Au. If the vacuum chamber is opened in between, the surface of Cr or Ti will get oxidized and that will give a poor adhesion. If a gold layer needs to be deposited directly on Silicon, then native oxide has to be removed by deep in diluted HF and immediately load the evaporation chamber. And after the deposition, the wafer has to be heated op to get some Au-Si diffusion which improves the adhesion. | ||
Revision as of 10:50, 30 July 2018
allic bond with gold. 5 nm to 10 nm thick of Cr or Ti is commonly used and it is important to deposit Cr or Ti and then immediately Au. If the vacuum chamber is opened in between, the surface of Cr or Ti will get oxidized and that will give a poor adhesion. If a gold layer needs to be deposited directly on Silicon, then native oxide has to be removed by deep in diluted HF and immediately load the evaporation chamber. And after the deposition, the wafer has to be heated op to get some Au-Si diffusion which improves the adhesion.