Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of silicon nitride using Lesker sputter system: Difference between revisions
| Line 29: | Line 29: | ||
|90 | |90 | ||
|4 | |4 | ||
| | |10 | ||
|Ar+45%N2 | |Ar+45%N2 | ||
|RT | |RT | ||
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|180 | |180 | ||
|4 | |4 | ||
| | |No | ||
|Ar+45%N2 | |Ar+45%N2 | ||
|RT | |RT | ||
Revision as of 14:36, 27 July 2018
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The Sputtering system Lesker can be use to deposit silicon nitride by reactive sputtering with a gas mixture of Ar and N2, where N2 is the reactive gas.
We have little experience with this so any information you obtain will be welcome.
Recipes on Lesker for deposition of silicon nitride
Recipes
The recipe below has been tried in the system. It is possible to change many of the parameters.
| Recipe name | Target | Gun | Power [W] | Pressure [mTorr] | RF substrate Power [W] | Gas | Temperature | Deposition rate |
| source 3 DC with nitrogen | Si | 3 | 90 | 4 | 10 | Ar+45%N2 | RT | ~1.7nm/min |
| source 1 DC with RF bias and nitrogen | Si | 1 | 180 | 4 | No | Ar+45%N2 | RT | ~4.25nm/min |