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'''Deposited rates'''
==Deposited rates==


This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see [[/Sputtering of TiW in Wordentec|here]]) and may change with these settings.
Depening on the settings (pressure and effect) during the sputtering process, the roughness and grain size of the deposited layer can be different. The deposition rate will also change with different settings, as seen below.  




'''Deposited film characteristics'''
'''Pressure <math>1*10^{-3}</math> mbar, Effect 150 W'''


AFM pictures show how the surface roughness is dependent of the process parameters, this can be seen here.
The rate is established to be '''0.9 '''Å/s (in the center of the 4" wafer, 0.7 Å/s at the edge).
 
This corresponds to a deposition time of '''1 minute 55 seconds''' for deposition of '''10 nm'''.
 
 
'''Pressure <math>1*10^{-2}</math> mbar, Effect 150 W'''
 
The rate is established to be '''1.3 '''Å/s (in the center of the 4" wafer, 1.0 Å/s at the edge).
 
This corresponds to a deposition time of '''1 min 16 seconds''' for deposition of '''10 nm'''.
 
 
'''Pressure <math>1*10^{-2}</math> mbar, Effect 300 W'''
 
The rate is established to be '''2.2 '''Å/s (in the center of the 4" wafer, 1.8 Å/s at the edge).
 
This corresponds to a deposition time of '''45 seconds''' for deposition of '''10 nm'''.
 
 
'''Pressure <math>5*10^{-2}</math> mbar, Effect 150 W'''
 
The rate is established to be '''1.3''' Å/s (in the center of the 4" wafer, 1.0 Å/s at the edge).
 
This corresponds to a deposition time of '''1 minute 15 seconds''' for deposition of '''10 nm'''.
 
 
'''Pressure <math>5*10^{-2}</math> mbar, Effect 250 W'''
 
The rate is established to be '''2.4''' Å/s (in the center of the 4" wafer, 1.6 Å/s at the edge).
 
This corresponds to a deposition time of '''42 seconds''' for deposition of '''10 nm'''.
 
 
''Deposition rates measured August-September 2008, KNIL.''
 
 
 
==Deposited film characteristics==
 
AFM pictures show how the surface roughness is dependent on the process parameters.
 
For the sputter process, the effect and argon pressure can be set to different values. Depending on the process parameters, the deposited layers will have different characteristics: the roughness, grain size and uniformity may be differnt.
 
 
'''Effect 150 W, pressure 1*10<sup>-3</sup> mbar'''
 
With use of the settings 150W and 1*10<sup>-3</sup> mbar, a surface with low roughness is deposited.
 
[[Image:Tiw 150W 0 001 nr2.jpg|480x480px|center|thumb|AFM picture of sputter deposited TiW. Used settings: 150W and 1*10<sup>-3</sup> mbar.]]
 
 
''Measurement done September 2008, KNIL.''
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