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→Process information: Added materials and links
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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
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→Equipment performance and process related parameters: Added parameters (mostly copied and modified from Alcatel)
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Note that to date (July 2018) we have processes available for deposition of Al, Cr, Au, Ni, Pd, Ag, Ti, and W as well as Ru. More will be available as they are requested, e.g., Nb is expected in the early fall of 2018.
Note that to date (July 2018) we have processes available for deposition of Al, Cr, Au, Ni, Pd, Ag, Ti, and W as well as Ru. More will be available as they are requested, e.g., Nb is expected in the early fall of 2018.


==Equipment performance and process related parameters==
==Equipment performance and process related parameters for the Temescal E-beam evaporator==


{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="10"  
 
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>Equipment 1</b>
|style="background:WhiteSmoke; color:black"|<b>Equipment 2</b>
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"|Deposition of metals ||style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*E-beam evaporation of metals
*Purpose 1
*Line-of-sight deposition
*Purpose 2
*Possible to tilt sample
|style="background:WhiteSmoke; color:black"|
*Possible to ion clean samples
*Purpose 1
*Possible to modify deposition by Ar ion bombardment
*Purpose 2
*Purpose 3
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Response 1
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*10Å - 1µm* (for some materials) 
*Performance range 1
*Performance range 2
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
*Performance range 3
|-
|-
|style="background:LightGrey; color:black"|Response 2
|style="background:LightGrey; color:black"|Deposition rate
|style="background:WhiteSmoke; color:black"|
*Performance range
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range
*0.5Å/s - 10Å/s
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Parameter 1
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
*Approximately room temperature
|style="background:WhiteSmoke; color:black"|
*Range
|-
|-
|style="background:LightGrey; color:black"|Parameter 2
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
* Below 1*10<sup>-6</sup> mbar before deposition starts
|style="background:WhiteSmoke; color:black"|
* Below 5*10<sup>-6</sup> mbar during deposition
*Range
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*Up to four 6" wafers per standard run
*<nowiki>#</nowiki> 50 mm wafers
*Or up to three 8" wafers
*<nowiki>#</nowiki> 100 mm wafers
*Up to one 6" wafer with tilt
*<nowiki>#</nowiki> 150 mm wafers
*Deposition on one side of the substrate
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Silicon wafers
*Allowed material 2
*Quartz wafers
*Pyrex wafers
|-
| style="background:LightGrey; color:black"|Material allowed on the substrate
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Silicon oxide
*Allowed material 2
*Silicon (oxy)nitride
*Allowed material 3
*Photoresist
*PMMA
*Mylar
*Metals
|-  
|-  
|}
|}


<br clear="all" />
'''*''' ''For thicknesses above 600 nm please request permission so we can ensure that enough material will be present.''
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Temescal"