Specific Process Knowledge/Thin film deposition/Temescal

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E Beam Evaporator (Temescal)

The Temescal is a system for depositing metals by electron-beam evaporation. It also has an ion source for in-situ Argon sputtering that can be used either for cleaning samples prior to deposition or to modify the film during deposition. Wafers are loaded into the top of the chamber, which acts as a loadlock as it can be separated from the rest of the chamber by a large gate valve. Deposition will happen on all samples that are loaded together. You can load up to four 6" wafers or three 8" wafers for line-of sight deposition, or up to one 6" wafer for tilted deposition (smaller samples may be tilted more). By using different sample holder inserts, you can deposit metals on samples of different sizes and shapes. The system contains 6 metals at a time and the metals are exchanged based on user requests, so please request the metals you wish well in advance.

The Temescal E-beam evaporator in cleanroom A-5

The user manual, user APV, and contact information can be found in LabManager:

E Beam Evaporator (Temescal) in LabManager

Process information

Materials for e-beam evaporation

• Aluminium (Al)
• Chromium (Cr)
• Copper (Cu)
• Gold (Au)
• Molybdenum (Mo)
• Nickel (Ni)
• Palladium (Pd)
• Platinum (Pt)
• Silver (Ag)
• Tantalum (Ta)
• Tin (Sn)
• Titanium (Ti)
• Tungsten (W) - thinner layers

Note that to date (July 2018) we have processes available for deposition of Al, Cr, Au, Ni, Pd, Ag, Ti, and W as well as Ru. More will be available as they are requested, e.g., Nb is expected in the early fall of 2018.

Equipment performance and process related parameters for the Temescal E-beam evaporator

Purpose	Deposition of metals	E-beam evaporation of metals Line-of-sight deposition Possible to tilt sample Possible to ion clean samples Possible to modify deposition by Ar ion bombardment
Performance	Film thickness	10Å - 1µm* (for some materials)
	Deposition rate	0.5Å/s - 10Å/s
Process parameter range	Process Temperature	Approximately room temperature
	Process pressure	Below 1*10-6 mbar before deposition starts Below 5*10-6 mbar during deposition
Substrates	Batch size	Up to four 6" wafers per standard run Or up to three 8" wafers Up to one 6" wafer with tilt Deposition on one side of the substrate
	Substrate material allowed	Silicon wafers Quartz wafers Pyrex wafers
	Material allowed on the substrate	Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals

* For thicknesses above 600 nm please request permission so we can ensure that enough material will be present.