Specific Process Knowledge/Thin film deposition/Deposition of TiW: Difference between revisions

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This is done by a sputtering process, process parameters (argon pressure and effect) can be varied, and the deposition rate and surface roughness may change with these settings.
This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see [[Sputtering of TiW in Wordentec|here]]) and may change with these settings.

Revision as of 07:45, 26 August 2008

Deposition of TiW alloy can take place in the Wordentec.


Sputter deposition (Wordentec)
Batch size
  • 24x2" wafers or
  • 6x4" wafers or
  • 6x6" wafers
Pre-clean RF Ar clean
Layer thickness .
Deposition rate Depending on process parameters, see here.


This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see here) and may change with these settings.