Specific Process Knowledge/Thin film deposition/Deposition of TiW: Difference between revisions
No edit summary |
No edit summary |
||
| Line 1: | Line 1: | ||
Deposition of TiW alloy can take place in the Wordentec. | Deposition of TiW alloy can take place in the Wordentec. | ||
{| border="1" cellspacing="0" cellpadding="4" | |||
! | |||
! Sputter deposition (Wordentec) | |||
|- | |||
| Batch size | |||
| | |||
*24x2" wafers or | |||
*6x4" wafers or | |||
*6x6" wafers | |||
|- | |||
| Pre-clean | |||
|RF Ar clean | |||
|- | |||
| Layer thickness | |||
|. | |||
|- | |||
| Deposition rate | |||
|Depending on process parameters, see [[Sputtering of TiW in Wordentec|here.]] | |||
|- | |||
|} | |||
This is done by a sputtering process, process parameters (argon pressure and effect) can be varied, and the deposition rate and surface roughness may change with these settings. | This is done by a sputtering process, process parameters (argon pressure and effect) can be varied, and the deposition rate and surface roughness may change with these settings. | ||
Revision as of 12:41, 14 August 2008
Deposition of TiW alloy can take place in the Wordentec.
| Sputter deposition (Wordentec) | |
|---|---|
| Batch size |
|
| Pre-clean | RF Ar clean |
| Layer thickness | . |
| Deposition rate | Depending on process parameters, see here. |
This is done by a sputtering process, process parameters (argon pressure and effect) can be varied, and the deposition rate and surface roughness may change with these settings.