Specific Process Knowledge/Thin film deposition/Deposition of AZO: Difference between revisions

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Revision as of 10:10, 7 April 2017

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AZO can be deposited by Sputtering process and atomic layer deposition (ALD). In the chart below you can compare the different deposition equipment.


Sputtering deposition (Lesker) Atomic layer deposition (ALD Picosun R200)
General description Sputter deposition of AZO Atomic layer deposition of AZO
Pre-clean RF Ar clean
Layer thickness 10Å to 5000Å* 0 to 1000 Å
Deposition rate Depending on process parameters. Depending on temperature
Batch size
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer or
  • 1x8" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Carbon
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)


Comment
  • Use 2 inch target
  • Substrate rotation
  • Substrate RF Bias (optional)

* For thicknesses above 200 nm permission is required.