Specific Process Knowledge/Characterization/PL mapper

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PhotoLuminescense Mapper RPM2000

Photoluminiscense mapping is a non-contact, non-destructive technique for mapping out uniformity of alloy composition, material quality and defects in substrates and of III-V epiwafers. The Rapid Photoluminiscense Mapper (RPM) is equipped with 3 lasers for PL measurements and a white-light source to map out thickness and reflectance of eg layers, microcavities and VCSELs.

It can also be used to map out voids after silicon wafer-bonding. This is done using the reflectance mapping and is using the fact that silicon is transparent for wavelengths above ~1000nm. A void will therefor change the reflectance in that wavelength range.

The user manual and contact information can be found in LabManager:

PL mapper

Positioned in the MOCVD room: F-1

Performance	Excitation	~100 mW @ 405 nm (~70mW on sample) ~10 mW @ 532 nm ~10 mW @ 980 nm white light source for thickness and reflectance measurements
	Detection	integrated signal: Si and/or InGaAs detector Spectral scan: Si CCD (up to 1100 nm), InGaAs photodiode array (900-1700 nm)
	Gratings	600 lines/mm (single frame: 60 nm @ 400 nm) 300 lines/mm (single frame: 120 nm @ 900 nm) 150 lines/mm (single frame: 270 nm @ 1550 nm)
	Chuck sizes	2", 3" and 4"
	Resolution	Minimum spatial resolution 100 µm spotsize ~100 µm
	Wavelength accuracy	< +/- 1 nm
Materials	Allowed substrate materials	III-V Silicon
	Forbidden materials	Do not map any wafers that might leave residues in the machine
Software	RPM viewer	Software (free) to view and re-analyse the maps and spectra can be found on Labmanager. Direct link to file download RPM2000 analysis software. The software will request you to get a (free) license key from Nanometrics.