Specific Process Knowledge/Thin film deposition/ALD Picosun R200/AZO deposition using ALD: Difference between revisions
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Revision as of 16:56, 16 March 2017
THIS PAGE IS UNDER CONSTRUCTION
Et2Zn or Zn(CH3CH2)2 = DEZ (diethylzinc)
Recipe: AZO 20T
Maximum deposition thickness: xx nm
Temperature: x oC - xx oC
# macrocycles | n | |||||||
---|---|---|---|---|---|---|---|---|
# cycles | 19 | 1 | ||||||
Precursor | DEZ | DEZ | H2O | H2O | TMA | TMA | H2O | H2O |
Nitrogen flow | 150 sccm | 150 sccm | 200 sccm | 200 sccm | 150 sccm | 150 sccm | 200 sccm | 200 sccm |
Pulse time | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s |
Purge time | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s |
How to fill out the process log in LabManager:
The pulse time for each precursor equals the total pulse time times the number of cycles in each macroscycle.
DEZ pulse time: (0.1 + 0.1) s * 20 = 4 s
TMA pulse time: (0.1 + 0.1 )s * 1 = 0.2 s
H2O pulse time: [(0.1 + 0.1) s * 20] + [(0.1 + 0.1) s * 1] = 4.2 s
The number of cycles for each precursor now equals the number of macrocycles (n).
Recipe: AZO 25T
Maximum deposition thickness: xx nm
Temperature: x oC - xx oC
# macrocycles | n | |||||||
---|---|---|---|---|---|---|---|---|
# cycles | 24 | 1 | ||||||
Precursor | DEZ | DEZ | H2O | H2O | TMA | TMA | H2O | H2O |
Nitrogen flow | 150 sccm | 150 sccm | 200 sccm | 200 sccm | 150 sccm | 150 sccm | 200 sccm | 200 sccm |
Pulse time | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s |
Purge time | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s |
How to fill out the process log in LabManager:
The pulse time for each precursor equals the total pulse time times the number of cycles in each macroscycle.
DEZ pulse time: (0.1 + 0.1) s * 25 = 5 s
TMA pulse time: (0.1 + 0.1 )s * 1 = 0.2 s
H2O pulse time: [(0.1 + 0.1) s * 20] + [(0.1 + 0.1) s * 1] = 5.2 s
The number of cycles for each precursor now equals the number of macrocycles (n).
Recipe: AZO 30T
Maximum deposition thickness: xx nm
Temperature: x oC - xx oC
# macrocycles | n | |||||||
---|---|---|---|---|---|---|---|---|
# cycles | 29 | 1 | ||||||
Precursor | DEZ | DEZ | H2O | H2O | TMA | TMA | H2O | H2O |
Nitrogen flow | 150 sccm | 150 sccm | 200 sccm | 200 sccm | 150 sccm | 150 sccm | 200 sccm | 200 sccm |
Pulse time | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s |
Purge time | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s |
Recipe: AZO 35T
Maximum deposition thickness: xx nm
Temperature: x oC - xx oC
# macrocycles | n | |||||||
---|---|---|---|---|---|---|---|---|
# cycles | 34 | 1 | ||||||
Precursor | DEZ | DEZ | H2O | H2O | TMA | TMA | H2O | H2O |
Nitrogen flow | 150 sccm | 150 sccm | 200 sccm | 200 sccm | 150 sccm | 150 sccm | 200 sccm | 200 sccm |
Pulse time | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s | 0.1 s |
Purge time | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s | 0.5 s | 20.0 s |