Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
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|<!--'''Process time'''--> 5min | |<!--'''Process time'''--> 5min | ||
|<!--'''Comment'''--> From s007409 the Gas flow ratio between C4F8 and H2 has been changed to more C4F8 and less H2. This | |<!--'''Comment'''--> From s007409 the Gas flow ratio between C4F8 and H2 has been changed to more C4F8 and less H2. This increased the etch rate (more fluorine). Trenching is seen and tappered sidewall is seen indicating a more physical etch. | ||
|<!--'''Results'''--> | |<!--'''Results'''--> | ||
[[File:ICP metal s007411_01.jpg|100px|frameless]] [[File:ICP metal s007411_02.jpg|100px|frameless]] | [[File:ICP metal s007411_01.jpg|100px|frameless]] [[File:ICP metal s007411_02.jpg|100px|frameless]] | ||