Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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|Adhesion | |Adhesion | ||
|Bad for pyrex, for other materials we do not know | |Bad for pyrex, for other materials we do not know | ||
|Good for | |Good for fused silica, silicon oxide, silicon nitride, silicon | ||
|- | |- | ||
|Substrate material allowed | |Substrate material allowed | ||
|Pyrex, | |Pyrex, fused silica, silicon, metals, oxide, nitride, blue tape | ||
| | |Fused silica, Silicon, oxide, nitride | ||
|- | |- | ||
|Doping facility | |Doping facility | ||
Revision as of 13:20, 14 March 2008
PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace.In the chart below you can compare the two different deposition methodes:
| Sputter (Alcatel) | Furnace PolySi | |
|---|---|---|
| Batch size |
|
|
| Pre-clean | RF Ar clean | RCA clean for wafers that are not fresh form the box. |
| Layer thickness | 10Å to 1µm | ~50Å to 2µm, if thicker layers are needed please ask the furnace team. |
| Deposition rate | 2Å/s to 15Å/s |
|
| Process temperature | ? | 560 oC and 620 oC |
| Step coverage | Poor | Good |
| Adhesion | Bad for pyrex, for other materials we do not know | Good for fused silica, silicon oxide, silicon nitride, silicon |
| Substrate material allowed | Pyrex, fused silica, silicon, metals, oxide, nitride, blue tape | Fused silica, Silicon, oxide, nitride |
| Doping facility | None | Can be doped during deposition with Boron and/or Phosphorous |
Sputtered Silicon in the Alcatel
| The parameter(s) changed | New value(s) | Deposition rate |
|---|---|---|
| Standard parameters | None | |
| Power | 400W | 3.8 Å/s |