Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | ||
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Cu|Electroplating-Cu]]) | ! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Cu|Electroplating-Cu]]) | ||
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! General description | ! General description | ||
|E-beam deposition of Cu | |E-beam deposition of Cu | ||
|Sputter deposition of Cu | |Sputter deposition of Cu | ||
|Electroplating of Cu | |Electroplating of Cu | ||
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!Pre-clean | !Pre-clean | ||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
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!Layer thickness | !Layer thickness | ||
|10Å to 0.5µm* | |10Å to 0.5µm* | ||
|10Å to 1µm* | |10Å to 1µm* | ||
| thickness window undefined yet | | thickness window undefined yet | ||
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! Deposition rate | ! Deposition rate | ||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
| ~1Å/s | | ~1Å/s | ||
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*Up to 1x4" wafers | *Up to 1x4" wafers | ||
*smaller pieces | *smaller pieces | ||
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*smaller pieces | *smaller pieces | ||
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* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
| Base Materials: | | Base Materials: | ||
*Silicon | *Silicon | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Comment | ! Comment | ||
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Revision as of 10:14, 19 September 2016
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Deposition of Cu
Copper can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipments.
E-beam evaporation (Alcatel) | Sputter deposition (Lesker) | Electroplating (Electroplating-Cu) | |
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General description | E-beam deposition of Cu | Sputter deposition of Cu | Electroplating of Cu |
Pre-clean | RF Ar clean | RF Ar clean | None |
Layer thickness | 10Å to 0.5µm* | 10Å to 1µm* | thickness window undefined yet |
Deposition rate | 2Å/s to 15Å/s | ~1Å/s | |
Batch size |
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Allowed materials |
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Base Materials:
Seed metals:
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Comment | Sample must be compatible with plating bath. Seed metal layer required to run electroplating process. |
* To deposit layers thicker then 200 nm permission is required (contact Thin film group)
Studies of Cu deposition processes
Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel