Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions

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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Cu|Electroplating-Cu]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Cu|Electroplating-Cu]])
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! General description
! General description
|E-beam deposition of Cu
|E-beam deposition of Cu
|Sputter deposition of Cu
|Sputter deposition of Cu
|Sputter deposition of Cu
|Electroplating of Cu
|Electroplating of Cu
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!Pre-clean
!Pre-clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
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!Layer thickness
!Layer thickness
|10Å to 0.5µm*
|10Å to 0.5µm*
|10Å to 1µm*
|10Å to 1µm*  
|10Å to 1µm*  
| thickness window undefined yet
| thickness window undefined yet
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! Deposition rate
! Deposition rate
|2Å/s to 15Å/s
|2Å/s to 15Å/s
|
Depending on [[Specific Process Knowledge/Thin film deposition/Multisource PVD/Cu|process parameters]]
| ~1Å/s
| ~1Å/s
|
|
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*Up to 1x4" wafers
*Up to 1x4" wafers
*smaller pieces
*smaller pieces
|
* 4x6" wafers or
* 12x4" wafers or
* 12x2" wafers
|
|
*smaller pieces
*smaller pieces
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* SU-8  
* SU-8  
* Metals  
* Metals  
| almost any
| Base Materials:  
| Base Materials:  
*Silicon
*Silicon
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  |-style="background:WhiteSmoke; color:black"
  |-style="background:WhiteSmoke; color:black"
! Comment
! Comment
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|
|
|
|

Revision as of 10:14, 19 September 2016

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Deposition of Cu

Copper can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipments.


E-beam evaporation (Alcatel) Sputter deposition (Lesker) Electroplating (Electroplating-Cu)
General description E-beam deposition of Cu Sputter deposition of Cu Electroplating of Cu
Pre-clean RF Ar clean RF Ar clean None
Layer thickness 10Å to 0.5µm* 10Å to 1µm* thickness window undefined yet
Deposition rate 2Å/s to 15Å/s ~1Å/s
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • smaller pieces
  • Up to 1x6" wafers
  • 1x4" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Base Materials:
  • Silicon

Seed metals:

  • Ti(10nm) + Au (80nm) (Recommended)
  • Cr(10nm) + Au (80nm) (Recommended)
Comment Sample must be compatible with plating bath. Seed metal layer required to run electroplating process.

* To deposit layers thicker then 200 nm permission is required (contact Thin film group)

Studies of Cu deposition processes

Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel