Specific Process Knowledge/Bonding/Anodic bonding: Difference between revisions
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Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in DANCHIPS cleanroom with Pyrex wafer. This also includes the plasma systems. | Try and put this as one of the last steps in you process sequence, since you cannot do high temperature steps in DANCHIPS cleanroom with Pyrex wafer. This also includes the plasma systems. | ||
===Bonding procedure=== | |||
*If the wafers are to be alinged remeber to put the Si wafers in first (Si wafer closest to the chuck). | |||
*If the wafers are just stacket on top of each other remeber to put the Si bellow (Si wafer closest to the chuck). | |||
*Align the wafers | |||
*Place the chuck and graphite electrode in the chamber. | |||
*Close the chamber. | |||
*Turn the µm screw on top of the chamber to set the desired stack height. | |||