Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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| Pre-clean | | Pre-clean | ||
|RF Ar clean | |RF Ar clean | ||
| | |RCA clean for wafers that are not fresh form the box. | ||
|- | |- | ||
| Layer thickness | | Layer thickness | ||
|10Å to 1µm | |10Å to 1µm | ||
| | |~50Å to 2µm, if thicker layers are needed please ask the furnace team. | ||
|- | |- | ||
| Deposition rate | | Deposition rate | ||
|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
| | | | ||
*undoped, boron doped:~100Å/min | |||
*Phospher doped:~20Å/min | |||
|- | |- | ||
|Process temperature | |Process temperature | ||
| Line 32: | Line 34: | ||
|- | |- | ||
|Step coverage | |Step coverage | ||
| | |Poor | ||
| | |Good | ||
|- | |- | ||
| | |Adhesion | ||
| | |Bad for pyrex, for other materials we do not know | ||
| | |Good for quartz, silicon oxide, silicon nitride, silicon | ||
|- | |- | ||
|Substrate material allowed | |Substrate material allowed | ||
| | |Pyrex, Quartz, Silicon, metals, oxide, nitride, blue tape | ||
| | |Quartz, Silicon, oxide, nitride | ||
|- | |- | ||
|Doping facility | |Doping facility | ||