Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

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Development of continuous nanoetch

The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% ) of silicon to be etched. If you intend to etch most of the surface of the wafer to create very small posts or ridges (rather than holes or trenches)

The most used one is the nano1.42 recipe - to access the results, click on the bold link in the bottom of the table.

Recipe	nano1.0	nano1.1	nano1.2	nano1.3	nano1.21	nano1.4	nano1.41	nano1.42	nano1.43
C₄F₈ (sccm)	52	52	52	52	75	75	75	75	75
SF₆ (sccm)	38	38	38	38	38	38	38	38	38
O₂ (sccm)	0	0	0	0	0	0	0	0	0
Coil power (W)	800 (F)	600 (F)	800 (F)	600 (F)	800 (F)	800 (F)	800 (F)	800 (F)	800 (F)
Platen power (W)	50	50	50	40	50	50	75	40	30
Pressure (mtorr)	4	4	4	4	4	4	4	4	4
Temperature (degs C)	10	10	-10	-10	-10	-20	-20	-20	-20
Process time (s)	120	120	120	120	120	120	120	120	120
Etch rates (nm/min)
Averages	295	228	299	235	183	183	166	160	148
Std. Dev	36	29	37	20	9	9	9	8	6
Zep etch rate (nm/min)
		172	95	94	69	67	101	65	55
Sidewall angle (degrees)
Averages	93	94	92	94	91	91	90	90	90
Std. Dev	1	1	0	1	0	0	1	0	0
CD loss (nm pr edge)
Averages	-11	-13	-17	-10	-10	-10	-20	-13	-24
Std. Dev	12	10	11	14	15	15	16	15	21
Bowing (nm)
Averages	31	42	13	16	6	6	3	-3	0
Std. Dev	7	6	4	3	2	2	2	3	1
Bottom curvature
Averages	-45	-45	-44	-43	-32	-32	-34	-32	-39
Std. Dev	5	7	4	9	10	10	9	8	9
Images	Images	Images	Images	Images	Images	Images	Images	Images	Images

Development of switched nanoetch process

On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.

**Process parameters**
Recipe	Step	Temp.	Deposition step						Etch step							Process observations
Recipe	Step	Temp.	Time	Pressure	C₄F₈	SF₆	O₂	Coil	Time	Pressure	C₄F₈	SF₆	O₂	Coil	Platen	Hardware	Runs
nanobosch6	A	20	2.5	10	50	0	0	500	5.0	10	40	60	5	350	30	LF+B100	Click
nb-1.0	A	20	2.5	10	50	0	0	500	5.0	10	50	50	5	350	30	LF+B100	Click
nb-1.1	A	20	2.5	10	50	0	0	500	5.0	10	50	50	5	350	50	LF+B100	Click
nb-1.2	A	20	2.5	10	50	0	0	500	5.0	10	50	50	5	500	50	LF+B100	Click
barcstrip	A	20							30	4 (3@15)	0	0	40	200	20	LF+B100	Click
nanobosch7	A	20	2.5	10	50	0	0	500	5.0	10	40	60	5	350	30	LF+B100	Click
																LF+B100	Click

@@ Line 4: / Line 4: @@
 == Development of continuous nanoetch ==
-The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% )of silicon to be etched. The most used one is the nano1.42 recipe - to access the results, click on the bold link in the bottom of the table.
+The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% ) of silicon to be etched. If you intend to etch most of the surface of the wafer to create very small posts or ridges (rather than holes or trenches)
+The most used one is the nano1.42 recipe - to access the results, click on the bold link in the bottom of the table.