Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers

This page describes non standart recipes including multilayers structures.

Low temperature deposition of Al₂O₃

Recipe: Al2O3 LT

Temperature: 80-150 ^oC

	TMA	H2O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.1 s	0.2 s
Purge time	5.0 s	10.0 s

Deposition rate: 0.089 nm/cycle (@120 ^oC)

This recipe has been developd for fabrication of high quality homogenious optical layers at low temperature. Research related results with this recipe can be found here: LINK

Al2O3 deposition at 120 oC

Deposition conditions at 120 oC for Al2O3 LT recipe Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm 250 24.83 1.22 0.16 1.61 500 45.48 1.35 0.41 1.63 750 68.03 1.42 0.59 1.63 1000 90.66 1.74 0.94 1.63

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The uniformity, thickness, refractive index has been obtained using Ellipsometer VASE.

• 
  Measured thickness distribution across 100 mm wafer.
• 
  Measured refractive index distribution across 100 mm wafer.

Evgeniy Shkondin, DTU Danchip, 2014-2016.

Low temperature deposition of TiO₂

Recipe: TiO2 LT

Temperature: 80-150 ^oC

	TiCl4	H2O
Nitrogen flow	150 sccm	200 sccm
Pulse time	0.2 s	0.2 s
Purge time	10.0 s	15.0 s

Deposition rate: 0.048 nm/cycle (@ 120 ^oC)

This recipe has been developd for fabrication of high quality homogenious optical layers at low temperature. The deposited TiO₂ layers are amorphous. Research related results with this recipe can be found here: LINK

TiO2 deposition at 120 oC

Deposition conditions at 120 oC for TiO2 LT recipe Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm 250 10.17 2.19 0.14 2.18 500 23.12 1.80 0.23 2.40 750 34.13 1.87 0.39 2.39 1000 46.13 1.78 0.50 2.39

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The uniformity, thickness, refractive index has been obtained using Ellipsometer VASE.

• 
  Measured thickness distribution across 100 mm wafer.
• 
  Measured refractive index distribution across 100 mm wafer.

Evgeniy Shkondin, DTU Danchip, 2014-2016.

Low temperature grown multilayers on flat surfaces

Recipe: EMA01

Recipe: EMA02

Recipe: EMA03

Recipe: EMA04

Temperature: 120 ^oC

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  Al₂O₃/TiO₂ multilayers.

File:Al2O3_TiO2_flat_multilayers.jpg
Evgeniy Shkondin, DTU Danchip, 2014-2016.

Investigation of chemical composition in multilayers system

Chemical taice analysis has been performed using XPS-ThermoScientific equipment in depth profile mode.

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  Survey scan.

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  Al 2p signal multilayers.
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  Ti 2p signal multilayers.
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  O 1s signal multilayers.
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  Si 2p signal multilayers.

Evgeniy Shkondin, DTU Danchip, 2014-2016.

Al₂O₃/TiO₂ multilayers on high aspect ratio structures

Recipe: Multi T

Temperature: 150 ^oC

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  Al₂O₃/TiO₂ multilayers grown on silicon trenches.

Evgeniy Shkondin, DTU Danchip, 2014-2016.