Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
3,786 edits
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
3,786 edits
Line 51: Line 51:
|-  
|-  
|250  
|250  
|19.58
|24.83
|2.23
|1.22
|0.35
|0.16
|1.66
|1.61


|-  
|-  
|500  
|500  
|37.94
|45.48
|2.09
|1.35
|0.60
|0.41
|1.65
|1.63


|-  
|-  
|750  
|750  
|56.52
|68.03
|1.85
|1.42
|0.81
|0.59
|1.65
|1.63


|-  
|-  
|1000  
|1000  
|75.91
|90.66
|1.49
|1.74
|0.59
|0.94
|1.65
|1.63


|-
|-
Line 84: Line 84:
|}
|}


%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%


==Low temperature deposition of TiO<sub>2</sub>==
==Low temperature deposition of TiO<sub>2</sub>==

Revision as of 16:14, 19 May 2016

This page describes non standart recipes including multilayers structures.

Low temperature deposition of Al2O3

Recipe: Al2O3 LT

Temperature: 80-150 oC

TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.2 s
Purge time 5.0 s 10.0 s

Deposition rate: 0.089 nm/cycle (@120 oC)



Al2O3 deposition at 120 oC


Deposition conditions at 120 oC for Al2O3 LT recipe
Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm
250 24.83 1.22 0.16 1.61
500 45.48 1.35 0.41 1.63
750 68.03 1.42 0.59 1.63
1000 90.66 1.74 0.94 1.63

%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

Low temperature deposition of TiO2

Recipe: TiO2 LT

Temperature: 80-150 oC

TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.2 s 0.2 s
Purge time 10.0 s 15.0 s

Deposition rate: 0.048 nm/cycle (@ 120 oC)

Low temperature grown multilayers on flat surfaces

Recipe: EMA01

Recipe: EMA02

Recipe: EMA03

Recipe: EMA04

Temperature: 120 oC

Al2O3/TiO2 multilayers on high aspect ratio structures

Recipe: Multi T

Temperature: 150 oC


  • Al2O3/TiO2 multilayers grown on silicon trenches.
    Al2O3/TiO2 multilayers grown on silicon trenches.



Evgeniy Shkondin, DTU Danchip, 2014-2016.

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/ALD_multilayers&oldid=23410"