Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
3,771 edits
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
3,771 edits
Line 33: Line 33:


{| border="2" cellspacing="2" cellpadding="3" colspan="10"
{| border="2" cellspacing="2" cellpadding="3" colspan="10"
|bgcolor="#98FB98" |'''Al<sub>2</sub>O<sub>3</sub> deposition at 100 <sup>o</sup>C and 150 <sup>o</sup>C'''
|bgcolor="#98FB98" |'''Al<sub>2</sub>O<sub>3</sub> deposition at 120 <sup>o</sup>C'''
|-
|-
|
|
Line 41: Line 41:
| align="center" |  
| align="center" |  
{| border="2" cellspacing="2" cellpadding="3"  align="center" style="width:750px"
{| border="2" cellspacing="2" cellpadding="3"  align="center" style="width:750px"
! colspan="5" |Deposition conditions at 100 <sup>o</sup>C
! colspan="5" |Deposition conditions at 120 <sup>o</sup>C for Al2O3 LT recipe
|-
|-
!Number of cycles
!Number of cycles
Line 50: Line 50:


|-  
|-  
|150
|250
|14.11
|19.58
|2.18
|2.23
|0.225
|0.35
|1.56
|1.66
 
|-
|300
|25.94
|0.68
|0.14
|1.59


|-  
|-  
|500  
|500  
|41.35
|37.94
|1.87
|2.09
|0.60
|0.60
|1.59
|1.65


|-  
|-  
|800
|750
|65.05
|56.52
|2.28
|1.85
|1.13
|0.81
|1.59
|1.65


|-  
|-  
|1088
|1000
|87.25
|75.91
|2.15
|1.49
|1.35
|0.59
|1.60
|1.65
 
 


|-
|-
|}
|}


|-
|-
Line 93: Line 86:
|}
|}


%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%


==Low temperature deposition of TiO<sub>2</sub>==
==Low temperature deposition of TiO<sub>2</sub>==

Revision as of 17:10, 19 May 2016

This page describes non standart recipes including multilayers structures.

Low temperature deposition of Al2O3

Recipe: Al2O3 LT

Temperature: 80-150 oC

TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.2 s
Purge time 5.0 s 10.0 s

Deposition rate: 0.089 nm/cycle (@120 oC)



Al2O3 deposition at 120 oC


Deposition conditions at 120 oC for Al2O3 LT recipe
Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm
250 19.58 2.23 0.35 1.66
500 37.94 2.09 0.60 1.65
750 56.52 1.85 0.81 1.65
1000 75.91 1.49 0.59 1.65


%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

Low temperature deposition of TiO2

Recipe: TiO2 LT

Temperature: 80-150 oC

TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.2 s 0.2 s
Purge time 10.0 s 15.0 s

Deposition rate: 0.048 nm/cycle (@ 120 oC)

Low temperature grown multilayers on flat surfaces

Recipe: EMA01

Recipe: EMA02

Recipe: EMA03

Recipe: EMA04

Temperature: 120 oC

Al2O3/TiO2 multilayers on high aspect ratio structures

Recipe: Multi T

Temperature: 150 oC


  • Al2O3/TiO2 multilayers grown on silicon trenches.
    Al2O3/TiO2 multilayers grown on silicon trenches.



Evgeniy Shkondin, DTU Danchip, 2014-2016.

Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/ALD_multilayers&oldid=23408"