Specific Process Knowledge/Thin film deposition/ALD Picosun R200/ALD multilayers: Difference between revisions

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Deposition rate: <b>0.089 nm/cycle </b>(@120 <sup>o</sup>C)
Deposition rate: <b>0.089 nm/cycle </b>(@120 <sup>o</sup>C)
{| border="2" cellspacing="2" cellpadding="3" colspan="10"
|bgcolor="#98FB98" |'''Al<sub>2</sub>O<sub>3</sub> deposition at 100 <sup>o</sup>C and 150 <sup>o</sup>C'''
|-
|
{| {{table}}
| align="center" |
{| border="2" cellspacing="2" cellpadding="3"  align="center" style="width:750px"
! colspan="5" |Deposition conditions at 100 <sup>o</sup>C
|-
!Number of cycles
|<b>Thickness (nm)</b>
|<b>Uniformity across 100mm Si substrate (%)</b>
|<b>Standard deviation error</b>
|<b>Refractive index @ 632.8 nm</b>
|-
|150
|14.11
|2.18
|0.225
|1.56
|-
|300
|25.94
|0.68
|0.14
|1.59
|-
|500
|41.35
|1.87
|0.60
|1.59
|-
|800
|65.05
|2.28
|1.13
|1.59
|-
|1088
|87.25
|2.15
|1.35
|1.60
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="2" cellpadding="3" align="center" style="width:750px"
! colspan="5" |Deposition conditions at 150 <sup>o</sup>C
|-
!Number of cycles
|<b>Thickness (nm)</b>
|<b>Uniformity across 100mm Si substrate (%)</b>
|<b>Standard deviation error</b>
|<b>Refractive index @ 632.8 nm</b>
|-
|150
|15.38
|1.72
|0.18
|1.61
|-
|300
|28.67
|1.73
|0.36
|1.62
|-
|500
|46.93
|1.75
|0.57
|1.62
|-
|800
|73.46
|1.75
|0.92
|1.63
|-
|1088
|99.50
|1.74
|1.20
|1.63
|-
|}
|-
|}
|}
%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%


==Low temperature deposition of TiO<sub>2</sub>==
==Low temperature deposition of TiO<sub>2</sub>==

Revision as of 16:01, 19 May 2016

This page describes non standart recipes including multilayers structures.

Low temperature deposition of Al2O3

Recipe: Al2O3 LT

Temperature: 80-150 oC

TMA H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.1 s 0.2 s
Purge time 5.0 s 10.0 s

Deposition rate: 0.089 nm/cycle (@120 oC)



Al2O3 deposition at 100 oC and 150 oC


Deposition conditions at 100 oC
Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm
150 14.11 2.18 0.225 1.56
300 25.94 0.68 0.14 1.59
500 41.35 1.87 0.60 1.59
800 65.05 2.28 1.13 1.59
1088 87.25 2.15 1.35 1.60


Deposition conditions at 150 oC
Number of cycles Thickness (nm) Uniformity across 100mm Si substrate (%) Standard deviation error Refractive index @ 632.8 nm
150 15.38 1.72 0.18 1.61
300 28.67 1.73 0.36 1.62
500 46.93 1.75 0.57 1.62
800 73.46 1.75 0.92 1.63
1088 99.50 1.74 1.20 1.63

%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

Low temperature deposition of TiO2

Recipe: TiO2 LT

Temperature: 80-150 oC

TiCl4 H2O
Nitrogen flow 150 sccm 200 sccm
Pulse time 0.2 s 0.2 s
Purge time 10.0 s 15.0 s

Deposition rate: 0.048 nm/cycle (@ 120 oC)

Low temperature grown multilayers on flat surfaces

Recipe: EMA01

Recipe: EMA02

Recipe: EMA03

Recipe: EMA04

Temperature: 120 oC

Al2O3/TiO2 multilayers on high aspect ratio structures

Recipe: Multi T

Temperature: 150 oC


  • Al2O3/TiO2 multilayers grown on silicon trenches.
    Al2O3/TiO2 multilayers grown on silicon trenches.



Evgeniy Shkondin, DTU Danchip, 2014-2016.

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