Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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==SiO2 etch with e-beam resist [[Image:section under construction.jpg|70px]]== | ==SiO2 etch with e-beam resist [[Image:section under construction.jpg|70px]]== | ||
'''Process flow:''' | |||
*Si, APOX 1152nm by filmtek | |||
*Si zep520A 560nm by dektakXT | |||
*jbx9500: 60na ap7 MF for all the exposure | |||
**same step size: 20nm | |||
**px1283mk: alignment mark for finfet | |||
**dose 280uc 3x3 at x pitch 10mm y pitch10mm in wafer center | |||
px1283lablejan1542014t1 250uc | |||
at 40mm x y | |||
pxline400p1000jan142014dt2 | |||
y= -40 -45 -50 -55mm | |||
dose 200 240 280 320uc | |||
*N50 20c 2min IPA, N2 gental blow dry 18:10 Jan152014 | |||
*Bruker Dektakxt Zep 560.51nmk | |||
*Metal ICP, 19:00 Jan152014, pxSiO2try9, -10C, 5min | |||
*Filmtek:large Apox area 5mmx3mm without zep SiO2 remains | |||
**494.53nm | |||
**SiO2 etched 1152-495=657nm | |||
**SiO2 etch rate: 131nm/min | |||
*sem zeiss, 1:50am Jan162014 still as over 200nm zep remains on the wafer for line400p1000, need high dose as 320uc. 280uc is not enough to go through 560nm thick zep520A | |||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
|-style="background:Gray; color:White" | |-style="background:Gray; color:White" | ||
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|Platen temperature [<sup>o</sup>C] | |Platen temperature [<sup>o</sup>C] | ||
| | | -10 | ||
|- | |- | ||
|C<sub>4</sub>F<sub>8</sub> flow [sccm] | |C<sub>4</sub>F<sub>8</sub> flow [sccm] | ||
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|-style="background:Black; color:White" | |-style="background:Black; color:White" | ||
!Results | !Results | ||
!Test on wafer with 50% load (Travka 50), by | !Test on wafer with 50% load (Travka 50), by Peixiong Shi@danchip | ||
|- | |- | ||
|Etch rate of thermal oxide | |Etch rate of thermal oxide | ||