Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions
Jump to navigation
Jump to search
No edit summary |
No edit summary |
||
Line 3: | Line 3: | ||
==Silicon nitride etch with STS recommended silicon nitride recipe== | ==Silicon nitride etch with STS recommended silicon nitride recipe== | ||
<gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon" widths="300px" heights="250px" perrow="5"> | |||
Image:duv_sin_03_04.jpg|2min etch: All resist is gone, only a little Si3N4 let and etched down into the Si | |||
Image:duv_sin_04_06.jpg|30sec etch | |||
Image:duv_sin_04_p1my_13.jpg|30 sec etch - 1µm pitch | |||
Image:duv_sin_04_p3my_07.jpg|30 sec etch - 3µm pitch | |||
Image:duv_sin_04_p3my_10.jpg|30 sec etch - 3 µm pitch | |||
</gallery> | |||
Revision as of 16:53, 16 March 2016
Feedback to this page: click here
Silicon nitride etch with STS recommended silicon nitride recipe
- Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon
Silicon nitride etch with the standard silicon oxide etch
- Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on. Made by BGHE February 2015