Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch)/Silicon Nitride Etch using AOE/Nitride etch with DUV mask: Difference between revisions
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==Silicon nitride etch with STS recommended silicon nitride recipe== | ==Silicon nitride etch with STS recommended silicon nitride recipe== | ||
<gallery caption="Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon" widths="300px" heights="250px" perrow="5"> | |||
Image:duv_sin_03_04.jpg|2min etch: All resist is gone, only a little Si3N4 let and etched down into the Si | |||
Image:duv_sin_04_06.jpg|30sec etch | |||
Image:duv_sin_04_p1my_13.jpg|30 sec etch - 1µm pitch | |||
Image:duv_sin_04_p3my_07.jpg|30 sec etch - 3µm pitch | |||
Image:duv_sin_04_p3my_10.jpg|30 sec etch - 3 µm pitch | |||
</gallery> | |||
Revision as of 16:53, 16 March 2016
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Silicon nitride etch with STS recommended silicon nitride recipe
- Profiles of etched lines. DUV resist mask and about 320nm Si3N4 on Silicon
2min etch: All resist is gone, only a little Si3N4 let and etched down into the Si
30sec etch
30 sec etch - 1µm pitch
30 sec etch - 3µm pitch
30 sec etch - 3 µm pitch
Silicon nitride etch with the standard silicon oxide etch
- Etch of LPCVD nitride with DUV KRF resist as mask. The mask is still on. Made by BGHE February 2015
Profile of lines with 1µm pitch
Profile of lines with 4µm pitch
Profile of 2µm line - zoom in on 4µm pitch
