Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions
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![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]] | ![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]] | ||
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | |||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Generel description | !Generel description | ||
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*Reactive Sputtering (Al target) or AlN target sputtering | *Reactive Sputtering ( 6" Al target) or AlN target sputtering | ||
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*Reactive Sputtering | |||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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*Depend on the target power | *Depend on the target power | ||
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*Not tested | |||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Film Thickness | !Film Thickness | ||
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* 0nm - 200nm | |||
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* 0nm - 200nm | * 0nm - 200nm | ||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
!Deposition rate | !Deposition rate | ||
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* Not tested | |||
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* Not tested | * Not tested | ||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!Step coverage | !Step coverage | ||
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*Very good | |||
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*Very good | *Very good | ||
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* Up to 400<sup>o</sup>C | * Up to 400<sup>o</sup>C | ||
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* Up to 450<sup>o</sup>C | |||
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|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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* 100 mm wafers (Up to 12 wafers at a time) | * 100 mm wafers (Up to 12 wafers at a time) | ||
* 150 mm wafers (Up to 4 wafers at a time) | * 150 mm wafers (Up to 4 wafers at a time) | ||
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* chips | |||
* 1x 100 mm wafer | |||
* 1x 150 mm wafer | |||
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|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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*SU-8 | *SU-8 | ||
*Any metals | *Any metals | ||
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*almost any | |||
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