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Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

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![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
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*Reactive Sputtering (Al target) or AlN target sputtering
*Reactive Sputtering ( 6" Al target) or AlN target sputtering
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*Reactive Sputtering
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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*Depend on the target power
*Depend on the target power
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*Not tested
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Film Thickness
!Film Thickness
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* 0nm - 200nm
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* 0nm - 200nm
* 0nm - 200nm
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Deposition rate
!Deposition rate
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* Not tested
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* Not tested
* Not tested
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|-style="background:WhiteSmoke; color:black"
!Step coverage
!Step coverage
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*Very good
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*Very good
*Very good
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* Up to 400<sup>o</sup>C
* Up to 400<sup>o</sup>C
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* Up to 450<sup>o</sup>C
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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* 100 mm wafers (Up to 12 wafers at a time)  
* 100 mm wafers (Up to 12 wafers at a time)  
* 150 mm wafers (Up to 4 wafers at a time)
* 150 mm wafers (Up to 4 wafers at a time)
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* chips
* 1x 100 mm wafer
* 1x 150 mm wafer
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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*SU-8  
*SU-8  
*Any metals  
*Any metals  
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*almost any
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