Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

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![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
![[Specific Process Knowledge/Thin film deposition/Multisource PVD|Cryofox PVD co-sputter/evaporation]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|
|
*Reactive Sputtering (Al target) or AlN target sputtering
*Reactive Sputtering ( 6" Al target) or AlN target sputtering
|
*Reactive Sputtering
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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|
|
*Depend on the target power
*Depend on the target power
|
*Not tested
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Film Thickness
!Film Thickness
|
* 0nm - 200nm
|
|
* 0nm - 200nm
* 0nm - 200nm
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Deposition rate
!Deposition rate
|
* Not tested
|
|
* Not tested
* Not tested
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
!Step coverage
|
*Very good
|
|
*Very good
*Very good
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|
* Up to 400<sup>o</sup>C
* Up to 400<sup>o</sup>C
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* Up to 450<sup>o</sup>C
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
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* 100 mm wafers (Up to 12 wafers at a time)  
* 100 mm wafers (Up to 12 wafers at a time)  
* 150 mm wafers (Up to 4 wafers at a time)
* 150 mm wafers (Up to 4 wafers at a time)
|
* chips
* 1x 100 mm wafer
* 1x 150 mm wafer
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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*SU-8  
*SU-8  
*Any metals  
*Any metals  
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*almost any
|-
|-
|}
|}

Revision as of 13:19, 2 November 2015

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Deposition of Aluminium Nitride

AlN can be deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen. AlN film can be deposited by using the Cryofox PVD co-sputter/evaporation or the Lesker Sputter System.



Only one method at the moment

Cryofox PVD co-sputter/evaporation Sputter System Lesker
Generel description
  • Reactive Sputtering ( 6" Al target) or AlN target sputtering
  • Reactive Sputtering
Stoichiometry
  • Depend on the target power
  • Not tested
Film Thickness
  • 0nm - 200nm
  • 0nm - 200nm
Deposition rate
  • Not tested
  • Not tested
Step coverage
  • Very good
  • Very good
Process Temperature
  • Up to 400oC
  • Up to 450oC
Substrate size
  • 100 mm wafers (Up to 12 wafers at a time)
  • 150 mm wafers (Up to 4 wafers at a time)
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Any metals
  • almost any
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