Specific Process Knowledge/Thin film deposition/Deposition of Titanium Oxide

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Deposition of Titanium Oxide

Titanium oxide can be deposited only by sputter technique. At the moment the only system where we have a target for Titanium oxide is IBE/IBSD Ionfab300. The target is Ti. During the sputter deposition oxygen is added to the chamber resulting in Titanium oxide on the sample.

• TiO2 made on IBE/IBSD Ionfab300

Comparison of the methods for deposition of Titanium Oxide

	Sputter technique using IBE/IBSD Ionfab300	Sputter System Lesker	III-V Dielectric evaporator	ALD Picosun 200
Generel description	TiO2 created from a Ti sputter target. By adding oxygen during the deposition TiO2 is created.	Reactive DC sputtering of Ti target in Ar/O2 (10% O2) plasma. RF sputtering of TiO2 target	E-beam evaporation of TiO2	ALD (atomic layer deposition of TiO2
Stoichiometry	Can probably be varied (sputter target: Ti, O2 added during deposition)	unknown	unknown	Covers sample everywhere (but long purge time needed very very high aspect ratio structures)
Film Thickness	~10nm - ~0.5µm(>2h)	~10nm - ~0.5µm(>2h)	~10nm - ~200 nm	0nm - 100nm
Deposition rate	3.0-3.5nm/min (reactive DC sputtering)	3 - 5 nm/min (RF sputtering) 0.3 - 0.5nm/min	1 - 2 Å/s	Not measured
Step coverage	Not Known	Not Known	Not Known
Process Temperature	Expected to be below 100oC	Done at RT. There is a possibility to run at higher temperatures	Sample temperature can be set to 20-250 oC	120oC - 150oC: Amorphous TiO2 300oC - 3450oC: Anatase TiO2
More info on TiO2	TiO2 made on IBE/IBSD Ionfab300
Substrate size	1 50mm wafer 1 100mm wafer 1 150mm wafer 1 200mm wafer Smaller pieces can be mounted with capton tape	several small samples several 50 mm wafers (Ø150mm carrier) 1x 100 mm wafers 1x 150 mm wafers	1x 2" wafer or several smaller samples	1-5 100 mm wafers 1-5 150 mm wafers Several smaller samples
Allowed materials	Almost any materials not Pb and very poisonous materials	Almost any materials Pb and poisonous materials only after special agreement		Silicon Silicon oxide, silicon nitride Quartz/fused silica Al, Al2O3 Ti, TiO2 Other metals (use dedicated carrier wafer) III-V materials (use dedicated carrier wafer) Polymers (depending on the melting point/deposition temperature, use carrier wafer)