Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing/Acceptance test: Difference between revisions
No edit summary |
No edit summary |
||
Line 1: | Line 1: | ||
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace: | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace:_Multipurpose_annealing/Acceptance_test click here]''' | ||
_Multipurpose_annealing/Acceptance_test click here]''' | |||
==Multipurpose Anneal furnace acceptance test== | ==Multipurpose Anneal furnace acceptance test== |
Revision as of 12:48, 28 August 2015
Feedback to this page: click here
Multipurpose Anneal furnace acceptance test
The acceptance for the Multipurpose Anneal furnace was performed in November 2014 by ATV Technologie and Danchip.
At the acceptance test a dry oxide layer was grown on a boat of 150 mm wafers. The oxide growth was repeated three times
For each run the oxide thickness and refractive index were measured on three of the wafers, and the standard deviation and non-uniformity were calculated for each wafer, over the boat and from run to run.
Oxidation parameters
Recipe: "vr_dryOx_1000C_120min_150_5Wafer_D1_mit_Inliner_oPurgering.ATV"
Oxidation time: 80 min
Temperature: 1050 oC (all temoperature zones)
O2 flow: 1 slm
The oxidation has been done with 150 mm wafers, and with 30 wafers in the furnace.
Wafer 4 (towards the door), wafer 16 and wafer 28 (towards the service area) were measured in 13 points using the M-2000V ellipsometer.
Results
Oxide thickness
Date | Wafer 4 | Wafer 16 | Wafer 28 | Center point only | |||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Average oxide thickness [nm] | St. deviation | Non-uniformity [%] | Average oxide thickness [nm] | St. deviation | Non-uniformity [%] | Average oxide thickness [nm] | St. deviation | Non-uniformity [%] | Average oxide thickness [nm] | St. deviation | Non-uniformity [%] | ||
Run 1 | 28-01-2015 | 109.7 | 1.0 | 1.7 | 107.7 | 0.9 | 1.1 | 106.5 | 0.8 | 1.2 | 107.0 | 2.1 | 1.9 |
Run 2 | 28-01-2015 | 107.3 | 1.7 | 2.4 | 105.0 | 1.4 | 1.7 | 107.3 | 0.7 | 0.9 | 105.7 | 1.0 | 0.9 |
Run 3 | 30-01-2015 | 103.6 | 0.8 | 1.1 | 102.6 | 0.6 | 1.2 | 102.2 | 0.6 | 1.1 | 102.9 | 1.0 | 1.0 |
Average | 106.9 | 1.2 | 1.7 | 105.1 | 1.0 | 1.3 | 105.3 | 0.7 | 1.1 | 105.2 | 1.4 | 1.3 |
Run-to-run | ||
---|---|---|
Average oxide thickness [nm] | St. deviation | Non-uniformity [%] |
105.2 | 2.1 | 2.0 |
Refractive index
Date | Wafer 4 | Wafer 16 | Wafer 28 | Center point only | |||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Average refractive index | St. deviation | Non-uniformity [%] | Average refractive index | St. deviation | Non-uniformity [%] | Average refractive index | St. deviation | Non-uniformity [%] | Average refractive index | St. deviation | Non-uniformity [%] | ||
Run 1 | 28-01-2015 | 1.46 | 0.00 | 0.04 | 1.46 | 0.00 | 0.07 | 1.46 | 0.00 | 0.06 | 1.4609 | 0.0004 | 0.0230 |
Run 2 | 28-01-2015 | 1.46 | 0.00 | 0.09 | 1.46 | 0.00 | 0.17 | 1.44 | 0.01 | 0.69 | 1.4561 | 0.0094 | 05873 |
Run 3 | 30-01-2015 | 1.46 | 0.00 | 0.06 | 1.46 | 0.00 | 0.05 | 1.46 | 0.00 | 0.07 | 1.4602 | 0.0004 | 0.0291 |
Average | 1.46 | 0.00 | 0.06 | 1.46 | 0.00 | 0.10 | 1.46 | 0.00 | 0.27 | 1.46 | 0.00 | 0.21 |
Run-to-run | ||
---|---|---|
Average refractive index | St. deviation | Non-uniformity [%] |
1.4591 | 0.0026 | 0.1637 |