Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing/Acceptance test: Difference between revisions

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Wafer 4 (towards the door), wafer 16 and wafer 28 (towards the service area) were measured.  
Wafer 4 (towards the door), wafer 16 and wafer 28 (towards the service area) were measured.  


==Results==


{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|-
|-
! Mask
! Run number
! Resist etch rate [nm/min]
! Resist etch rate [nm/min]
! colspan="5" | Silicon etch rate [µm/min]
! colspan="3" | Wafer 4
! colspan="5" | Trench width [µm]
! colspan="3" | Wafer 16
! colspan="5" | Under etch [µm]
! colspan="3" | Wafer 28
! colspan="5" | Silicon etch angle [<sup>o</sup>C]
|-
|-
! width="80" |   
! width="80" |   
! width="80" |  
! width="80" |  
! width="50" | 2 µm
! width="50" | Average oxide thickness [nm]
! width="50" | 4 µm
! width="50" | St. deviation
! width="50" | 10 µm
! width="50" | Non-uniformity [%]
! width="50" | 50 µm
! width="50" | Average oxide thickness [nm]
! width="50" | 200 µm
! width="50" | St. deviation
! width="50" | 2 µm
! width="50" | Non-uniformity [%]
! width="50" | 4 µm
! width="50" | Average oxide thickness [nm]
! width="50" | 10 µm
! width="50" | St. deviation
! width="50" | 50 µm
! width="50" | Non-uniformity [%]
! width="50" | 200 µm
! width="50" | 2 µm
! width="50" | 4 µm
! width="50" | 10 µm
! width="50" | 50 µm
! width="50" | 200 µm
! width="50" | 2 µm
! width="50" | 4 µm
! width="50" | 10 µm
! width="50" | 50 µm
! width="50" | 200 µm
|-
|-
! Travka5
! Run 1
| 67.31
| 0.6
| 0.63
| 0.63
| 0.62
| 0.61
| 2.60
| 4,91
| 10.96
| 51.00
| 201.90
|
|
|
|
|
|
|
|
|
|
|  
|  
| 109.7
| 1.0
| 1.7
| 107.7
| 0.9
| 1.1
| 106.5
| 0.8
| 1.2
|-
|-
! Travka10
! Run 2  
| 63.94
| 0.57
| 0.59
| 0.59
| 0.58
| 0.61
| 2.32
| 4.60
| 
|
|
|
|
|
|
|
|
|
|
|
|
|  
|  
| 107.3
| 1.7
| 2.4
| 102.6
| 0.6
| 1.2
| 102.2
| 0.6
| 1.1
|-
|-
! Travka20
! Run 3
| 63.13
| 0.63
| 0.63
| 0.64
| 0.64
| 0.59
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|-
! Travka35
| 59.63
| 0.57
| 0.60
| 0.61
| 0.61
| 0.55
|
|
|
|
|
|
|
|
|
|
|
|
| 
|
|
|
|-
! Travka50
| 57.13
| 0.47
| 0.5
| 0.51
| 0.51
| 0.49
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|-
! Travka65 
| 57.88
| 0.41
| 0.41
| 0.42
| 0.42
| 0.43
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|-
! Travka80 
| 57.56
| 0.37
| 0.36
| 0.37
| 0.37
| 0.38
|
|
|
|
|
|
|
|
|
|  
|  
| 103.6
| 0.8
| 1.1
|  
|  
|  
|  

Revision as of 08:54, 12 August 2015

THIS PAGE IS UNDER CONSTRUCTION

The acceptance for the Multipurpose Anneal furnace was performed in November 2014 by ATV Technologie.



Recipe: "vr_dryOx_1000C_120min_150_5Wafer_D1_mit_Inliner_oPurgering.ATV"

Oxidation time: 80 min Oxidation temperature: 1050 oC O2 flow: 1 slm

The oxidation has been done with 150 mm wafer, and with 30 wafers in the furnace.

Wafer 4 (towards the door), wafer 16 and wafer 28 (towards the service area) were measured.

Results

Run number Resist etch rate [nm/min] Wafer 4 Wafer 16 Wafer 28
Average oxide thickness [nm] St. deviation Non-uniformity [%] Average oxide thickness [nm] St. deviation Non-uniformity [%] Average oxide thickness [nm] St. deviation Non-uniformity [%]
Run 1 109.7 1.0 1.7 107.7 0.9 1.1 106.5 0.8 1.2
Run 2 107.3 1.7 2.4 102.6 0.6 1.2 102.2 0.6 1.1
Run 3 103.6 0.8 1.1
Common Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
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