Specific Process Knowledge/Thin Film deposition/ALD/Al2O3 deposition using ALD: Difference between revisions
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===Al<sub>2</sub>O<sub>3</sub> deposition rates=== | ====Al<sub>2</sub>O<sub>3</sub> deposition rates==== | ||
The deposition rate for Al<sub>2</sub>O<sub>3</sub> depends on the temperature, see the graph below. | The deposition rate for Al<sub>2</sub>O<sub>3</sub> depends on the temperature, see the graph below. | ||
Revision as of 10:54, 3 July 2015
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The ALD window for depostion of aluminium dioxide (Al2O3) ranges from 150 oC to 350 oC. XPS measurements shows that at temperatures below 150 oC the Al2O3 layer will be contaminated by unreacted TMA molecules, and at temperatures above 350 oC the TMA decomposes.
All results shown on this page have been obtained using the "AL2O3" recipe on new Si(100) wafers with native oxide:
Al2O3 standard recipe
Recipe: AL2O3
Temperature: 150 oC - 350 oC
| TMA | H2O | |
|---|---|---|
| Nitrogen flow | 150 sccm | 200 sccm |
| Pulse time | 0.1 s | 0.1 s |
| Purge time | 3.0 s | 4.0 s |
Al2O3 deposition rates
The deposition rate for Al2O3 depends on the temperature, see the graph below.
 |
|---|
In the graphs below the Al2O3 thickness as function of number of cycles for deposition temperatures between 150 oC and 350 oC can be seen. From the equations the number of cycles required for a certain thickess can be calculated.
- Aluminium oxide thickness as function of number of cycles
-
Temperature 150 oC. -
Temperature 200 oC. -
Temperature 250 oC. -
Temperature 300 oC. -
Temperature 350 oC.
Evgeniy Shkondin, DTU Danchip, February-March 2014.