Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings: Difference between revisions

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Image:IBE 30min -Cr1.jpg |'''30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:IBE 30min -Cr1.jpg |'''30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:after IBE 45min_A_34.jpg |45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3  
Image:after IBE 45min_A_34.jpg |'''45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm
Image:Edge_1.jpg|20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
Image:Edge_1.jpg|'''20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings'''
Image:15min+30min5.jpg|15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
Image:15min+30min5.jpg|'''15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm


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Revision as of 08:35, 27 May 2015

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  • Blazed gratingen in fused silica etched with Cr and DUV resist as masking layer
  • 30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 *Rotation speed 0 rpm *Angle: -35 *I(N)=400mA *RF power=1300W *I(B)=300mA *V(B)=300V *V(AC,B)=500V *Ar(N) flow=5sccm *Ar(B) flow=5sccm *CHF3 flow=15sccm
    30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm
  • 45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 *Rotation speed 0 rpm *Angle: -35 *I(N)=400mA *RF power=1300W *I(B)=300mA *V(B)=300V *V(AC,B)=500V *Ar(N) flow=5sccm *Ar(B) flow=5sccm *CHF3 flow=15sccm
    45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm
  • 20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
    20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
  • 15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3 *Rotation speed 0 rpm *Angle: -35 *I(N)=400mA *RF power=1300W *I(B)=300mA *V(B)=300V *V(AC,B)=500V *Ar(N) flow=5sccm *Ar(B) flow=5sccm *CHF3 flow=15sccm
    15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm
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