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Specific Process Knowledge/Wafer cleaning/7-up & Piranha: Difference between revisions

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|'''General description'''
|'''General description'''
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Cleaning of wafers or masks using the dedicated tank.
Cleaning of wafers or masks using the dedicated tanks.
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Cleaning of wafers or masks using a beaker in the fumehood.
Cleaning of wafers or masks using a beaker in the fumehood.
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|-
|'''Chemical solution'''
|'''Chemical solution'''
|98% Sulfuricacid and Ammoniumsulfat
|98% Sulfuricacid and Hydrogenperoxide 4:1
|98% Sulfuricacid and Hydrogenperoxide 4:1
|HCl:HNO<math>_3</math>  (3:1)
|-
|-
|'''Process temperature'''
|'''Process temperature'''
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|'''Possible masking materials'''
|'''Possible masking materials'''
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Photoresist (1.5 µm AZ5214E)
None
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Unmasked - used as a stripper
None
|-
|-
|'''Etch rate'''
|'''Etch rate'''
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~100 nm/min
Cleaning only
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~(??) nm/min - fast etch
Cleaning only
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|-
|'''Batch size'''
|'''Batch size'''
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1-5 4" wafers at a time
25 4" wafers or 5 masks at a time  
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1-5 4" wafer at a time
1-5 4" wafer at a time
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|'''Size of substrate'''
|'''Size of substrate'''
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2-6" wafers
4-6" wafers
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2-6" wafers
2-4" wafers
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|-
|}
|}
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