Specific Process Knowledge/Wafer cleaning/7-up & Piranha: Difference between revisions

Revision as of 13:14, 20 February 2008

Cleaning of wafers or masks with sulphuric acid can be done either in a dedicated tank "7-up" or in the fumehood in a beaker "Piranha":

	7-up	Piranha
General description	Cleaning of wafers or masks using the dedicated tank.	Cleaning of wafers or masks using a beaker in the fumehood.
Chemical solution	98% Sulfuricacid and Hydrogenperoxide 4:1	HCl:HNO $_{3}$ (3:1)
Process temperature	80 ^oC	~70 ^oC
Possible masking materials	Photoresist (1.5 µm AZ5214E)	Unmasked - used as a stripper
Etch rate	~100 nm/min	~(??) nm/min - fast etch
Batch size	1-5 4" wafers at a time	1-5 4" wafer at a time
Size of substrate	2-6" wafers	2-6" wafers

@@ Line 1: / Line 1: @@
 ==Cleaning of wafers or masks==
-Cleaning of wafers or masks with sulphuric acid can be done either in a dedicated tank "7-up" or in the fumehood in a beaker "Piranda":
+Cleaning of wafers or masks with sulphuric acid can be done either in a dedicated tank "7-up" or in the fumehood in a beaker "Piranha":
 {| border="2" cellspacing="0" cellpadding="4" align="left"
@@ Line 9: / Line 9: @@
 |'''General description'''
 |
-Etch of pure Gold with or without photoresist mask.
+Cleaning of wafers or masks using the dedicated tank.
 |
-Etch of pure Gold (as stripper).
+Cleaning of wafers or masks using a beaker in the fumehood.
 |-
 |'''Chemical solution'''
-|KJ:J<math>_2</math>:H<math>_2</math>O   (100g:25g:500ml)
+|98% Sulfuricacid and Hydrogenperoxide 4:1
 |HCl:HNO<math>_3</math>  (3:1)
 |-
 |'''Process temperature'''
-|20 <sup>o</sup>C
+|80 <sup>o</sup>C
-|20 <sup>o</sup>C
+|~70 <sup>o</sup>C
 |-