Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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[[Image:BHF_RR3.jpg|300x300px|thumb|Wet Silicon Oxide Etch (BHF): positioned in cleanroom 3]] | [[Image:BHF_RR3.jpg|300x300px|thumb|Wet Silicon Oxide Etch (BHF): positioned in cleanroom 3]] | ||
This is | Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stabil etch rate and has a high selectivty of oxide compared to photoresist which makes photoresist a good masking material for the oxide etch. However etching down to a silicon surface BHF leaves the siliocn surface slightly more rough than a pure HF solution. | ||
SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes (~<?) | |||
Revision as of 13:30, 19 February 2008
Wet Silicon Oxide Etch (BHF and SIO Etch (wetting agent))
Silicon oxide can be etched using HF. At Danchip it is mainly used in a buffered version BHF (premixed). The BHF has a more stabil etch rate and has a high selectivty of oxide compared to photoresist which makes photoresist a good masking material for the oxide etch. However etching down to a silicon surface BHF leaves the siliocn surface slightly more rough than a pure HF solution.
SIO etch (BHF with wetting agent) can also be used for etching silicon oxide. This is mainly for etching small holes (~<?)