Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
No edit summary |
|||
| Line 3: | Line 3: | ||
The concentration of boron in the wafer depends on the process temperature. | The concentration of boron in the wafer depends on the process temperature. | ||
The depth profile depends of the process time | The depth profile depends of the process time. | ||
<gallery caption="Boring profiles" widths="300px" heights="300px" perrow="3"> | |||
image:borprofil_1tim.jpg|1 time | |||
image:borprofil_6tim.jpg|6 time | |||
image:borprofil_16tim.jpg|16 lange timer | |||
</gallery> | |||