Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
No edit summary |
|||
| Line 3: | Line 3: | ||
The concentration of boron in the wafer depends on the process temperature. | The concentration of boron in the wafer depends on the process temperature. | ||
The depth profile depends of the process time | The depth profile depends of the process time. | ||
<gallery caption="Boring profiles" widths="300px" heights="300px" perrow="3"> | |||
image:borprofil_1tim.jpg|1 time | |||
image:borprofil_6tim.jpg|6 time | |||
image:borprofil_16tim.jpg|16 lange timer | |||
</gallery> | |||
Revision as of 14:41, 8 February 2008
Dope with boron
The furnace A2 boron predep can be used to predeposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Boron is predeposited on the silicon wafers. -Rune, hvad er det der sker?
The concentration of boron in the wafer depends on the process temperature. The depth profile depends of the process time.
- Boring profiles
-
1 time -
6 time -
16 lange timer
