Revision as of 10:07, 11 December 2014

Comparison of continuous processes

Process		Before			After
Name/Type	Description	Wafer ID	Comment	SEM images	Wafer ID	Comment	SEM images
Continuous black silicon recipe on blank wafer	15 mins, -10 degrees, 32 mtorr, 60 sccm SF₆, 55 sccm O₂, 70 W platen	S004592	Wafer centre		S004679	Wafer centre
Continuous black silicon recipe on blank wafer		S004592	Wafer edge		S004679	Wafer edge
Switched etch of 1.8 µm polysilicon on BOX patterned with DUV	50 cycles, 30 degrees, 2.3/5 secs, 10/10 mtorr, 0/60 sccm SF₆, 0/5 sccm O₂, 50/20 sccm C₄F₈, 600/400 W coil, 0/40 W platen	S004593	6" wafer		S004679	Wafer centre
		S004593	Wafer edge		S004679	Wafer edge

Recipe description	Name	Temp.	Deposition step						Etch step							Process observations
Recipe description	Name	Temp.	Time	Pres.	C₄F₈	SF₆	O₂	Coil	Time	Pres.	C₄F₈	SF₆	O₂	Coil	Platen	Hardware	Runs	Key words
Polysilicon etch	Original	30	2.3	10	50	0	0	600	5.0	10	20	60	5	400	40	-	1
	Cpoly1	30	1.2	10	50	0	0	600	5.0	10	20	60	5	400	40	-	1
	Cpoly2	30	1.4	10	50	0	0	600	5.0	10	20	60	5	400	40	-	1
	Cpoly3	30	1.6	10	50	0	0	600	5.0	10	20	60	5	400	40	-	1
	Cpoly4	30	1.8	10	50	0	0	600	5.0	10	20	60	5	400	40	-	1
	Cpoly5	30	2.0	10	50	0	0	600	5.0	10	20	60	5	400	40	-	1

@@ Line 80: / Line 80: @@
 ! Coil
 ! Platen
-| Hardware]]
+| Hardware
 ! Runs
 ! width="100" | Key words
 |-
 ! rowspan="6" | Polysilicon etch    <!-- recipe name -->
-! Original  -       <!-- step -->
+! Original   <!-- step -->
 | 30       <!-- chiller temp -->
 ! 2.3       <!-- dep time -->