Specific Process Knowledge/Lithography/Baking: Difference between revisions

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==Fumehood hotplates==   
==Fumehood hotplates==   
[[Image:Hotplates.jpg|300x300px|thumb|Right: Hotplate 90 °C situated in C-1]]
Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.
Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.
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<gallery caption="Different places to do wet silicon oxide etch" widths="220px" heights="225px" perrow="5">
image:BHF clean RR3.jpg|BHF clean in Cleanroom C-1. Wet silicon oxide etch bath positioned to the left in the bench.
image:KOH_4tommer.jpg|BHF in cleanroom C-1 (KOH bench 1+2.) The BHF bath is positioned between the two KOH baths. This is primarily used to remove oxide before and after a KOH etch.
image:KOH3 RR4 1.JPG|BHF in cleanroom D-3 (KOH bench 6".) The BHF bath is positioned to the right. This is primarily used to remove oxide before and after a KOH etch.
image:BHF-PolySi-Al Etch.jpg|SIO etch bath (BHF with wetting agent) are positioned to the left in the bench in cleanroom D-3.
image:Stinkskab RR2.jpg|PP-bath: positioned in the upper right corner of the fumehood in cleanroom B-1. </gallery>
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Revision as of 13:57, 6 November 2014

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Comparing baking methods

Hotplate: 90-110C SU8 hotplates Fumehood hotplates Oven 90C Oven: 120C - 250C Oven 250C
Purpose

Programmable contact bake

Soft bake, PEB

Programmable, ramped contact bake

Soft bake and PEB of SU-8

Manual contact bake

Soft bake

Manual convection bake

Soft bake

Manual convection bake

Hard bake

Manual convection bake

Dehydration

Temperature

Maximum 120°C

Maximum 250°C

Maximum 300°C

Maximum temperature may be limited on the individual hotplate

Fixed at 90°C

120 - 250°C

Return to 120°C after use

Fixed at 250°C

Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • pieces
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers
  • pieces
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and polymer substrates

Film or pattern of all types except type IV

Respect the allowed materials on the associated spin coater

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and polymer substrates

Film or pattern of all types

Silicon, glass, and high Tg polymer substrates

Film or pattern of all types except resist

Restrictions III-V, copper, steel substrates

Pb, Te films

III-V substrates unless specifically stated

Respect the restrictions on the associated spin coater

III-V substrates

Pb, Te films

III-V, copper, steel substrates Resist is not allowed


Hotplates

Hotplate: 90-110C

Location of Hotplate: 90-110C in C-1

Hotplate: 90-110C is used for baking of 2" - 6" wafers.

The user manual, and contact information can be found in LabManager: Hotplate: 90-110C


SU8 hotplates

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have two dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)

Fumehood hotplates

Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.


Ovens

Oven 90C

Oven 90 °C: positioned in C-1

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

The user manual, and contact information can be found in LabManager: Oven 90C

Oven: 120C - 250C

Variable temperature convection oven mostly used for baking of wafers as a hard baking step after development of photoresist. The set-point can be varied, but should always be returned to 120°C after use.

The user manual, and contact information can be found in LabManager: Oven: 120C - 250C

Oven 250C for pretreatment

Oven 250C for pretreatment: positioned in C-1

See Oven 250C