Specific Process Knowledge/Lithography/Baking

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Comparing baking methods

	Hotplate: 90-110C	SU8 hotplates	Fumehood hotplates	Oven 90C	Oven: 120C - 250C	Oven 250C
Use	Soft bake Post-exposure bake (PEB)	Soft bake Post-exposure bake (PEB)	Soft bake	Soft bake	Hard bake	Dehydration
Temperature	Maximum 120°C	Maximum 250°C	Maximum 250°C	Fixed 90°C	120 - 250°C	Fixed 250°C
Substrate size	50 mm wafers 100 mm wafers 150 mm wafers	pieces 50 mm wafers 100 mm wafers 150 mm wafers 200 mm wafers	pieces 50 mm wafers 100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers
Allowed materials	Silicon, glass, and polymer substrates Film or pattern of all types	Silicon, glass, and polymer substrates Film or pattern of all types except type IV	All substrates Film or pattern of all types	Silicon, glass, and polymer substrates Film or pattern of all types	Silicon, glass, and polymer substrates Film or pattern of all types	Silicon, glass, and high Tg polymer substrates Film or pattern of all types except resist
Restrictions		III-V, copper, steel substrates and Pb, Te films	Information is given at the individual hotplate	III-V substrates and Pb, Te films	III-V, copper, steel substrates	Resist is not allowed

Hotplates

Hotplate: 90-110C

Location of Hotplate: 90-110C in C-1

Hotplate: 90-110C is used for baking of 2" - 6" wafers.

The user manual, and contact information can be found in LabManager: Hotplate: 90-110C

SU8 hotplates

Hotplate 1 (SU8) and Hotplate 2 (SU8) situated in C-1

We have two dedicated SU-8 hotplates in C-1.

Users can control the ramp-time, the baking temperature, and the baking time.

The user manual, and contact information can be found in LabManager: Hotplate 1 (SU8) Hotplate 2 (SU8)

Fumehood hotplates

Right: Hotplate 90 °C situated in C-1

Variable temperature hotplate mostly used for baking of single wafers as a soft baking step after a spin coating of photoresist.

Ovens

Oven 90C

Oven 90 °C: positioned in C-1

The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.

The user manual, and contact information can be found in LabManager: Oven 90C

Oven: 120C - 250C

The user manual, and contact information can be found in LabManager: Oven: 120C - 250C

Oven 250C for pretreatment

Oven 250C for pretreatment: positioned in C-1

See Oven 250C