Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]]) | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
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| E-beam deposition of Mo | | E-beam deposition of Mo | ||
| E-beam deposition of Mo | | E-beam deposition of Mo | ||
| Sputter deposition of Mo | |||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
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|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to 0.5 µm* | |10Å to 0.5 µm* | ||
|10Å to 500 Å | |||
|10Å to 500 Å | |10Å to 500 Å | ||
|- | |- | ||
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|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
| About 1 Å/s | | About 1 Å/s | ||
| Depends on process parameters, roughly about 1 Å/s | |||
|- | |- | ||
|- | |- | ||
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*12x4" wafers or | *12x4" wafers or | ||
*4x6" wafers | *4x6" wafers | ||
| | |||
* Pieces or | |||
* 1x4" wafer or | |||
* 1x6" wafer | |||
|- | |- | ||
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* SU-8 | * SU-8 | ||
* Metals | * Metals | ||
| | |||
* Silicon | |||
* Silicon oxide | |||
* Silicon nitride | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
* SU-8 | |||
| | | | ||
* Silicon | * Silicon | ||
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| | | | ||
|Only very thin layers (up to 100nm). | |Only very thin layers (up to 100nm). | ||
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|- | |- | ||